公开(公告)号：US20130112265A1

公开(公告)日：2013-05-09

申请号：US13626740

申请日：2012-09-25

Applicant: SILEVO, INC.

Inventor： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

IPC: H01L31/0747 ,  H01L31/18

CPC classification number: H01L31/0747 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.