公开(公告)号：US09202428B2

公开(公告)日：2015-12-01

申请号：US14135597

申请日：2013-12-20

Applicant: Sitronix Technology Corp.

Inventor： Chung-Hsin Su ,  Tsun-Sen Lin

IPC: G09G3/36 ,  G11C11/406 ,  G09G5/18 ,  G09G5/397

CPC classification number: G09G3/2092 ,  G09G3/3674 ,  G09G5/18 ,  G09G5/397 ,  G09G2320/0252 ,  G09G2330/021 ,  G11C11/406

Abstract: A method of refreshing a memory array for a driving circuit includes generating a word-line scanning signal corresponding to a word-line of a memory array, and turning on a plurality of memory cells corresponding to the word-line of the memory array according to the word-line scanning signal to refresh the plurality of memory cells corresponding to the word-line of the memory array, wherein the memory has a first number of bit-lines and a second number of word-lines.

Abstract translation: 刷新用于驱动电路的存储器阵列的方法包括：生成与存储器阵列的字线相对应的字线扫描信号，并根据存储器阵列的字线对应于多个存储单元 所述字线扫描信号刷新对应于所述存储器阵列的字线的多个存储单元，其中所述存储器具有第一数量的位线和第二数量的字线。