公开(公告)号：US06492275B2

公开(公告)日：2002-12-10

申请号：US09488870

申请日：2000-01-21

申请人： Deborah J. Riley ,  Terri A. Couteau

发明人： Deborah J. Riley ,  Terri A. Couteau

IPC分类号： H01L21311

CPC分类号： H01L29/6659 ,  H01L21/31111

摘要： Methods of patterning sidewall spacers are provided. In one aspect, a method of fabricating a circuit device includes forming a gate on a substrate and forming a first oxide spacer and a second oxide spacer adjacent to the gate. The width of the gate and the first and second oxide spacers is measured. The widths of the first and second oxide spacers are trimmed if the width of the gate and the first and second oxide spacers exceeds a preselected maximum value by exposing the first and second oxide spacers to a solution of ammonium hydroxide, hydrogen peroxide and water for a preselected like and rinsing with deionized water. Spacer width may be finely tuned to reduce the risk of weak overlap and to improve device characteristics through shorter channels.

摘要翻译： 提供图案化侧壁间隔物的方法。 一方面，一种制造电路器件的方法包括在衬底上形成栅极，并形成邻近栅极的第一氧化物间隔物和第二氧化物间隔物。 测量栅极和第一和第二氧化物间隔物的宽度。 如果通过将第一和第二氧化物间隔物暴露于氢氧化铵，过氧化氢和水的溶液中，如果栅极和第一和第二氧化物间隔物的宽度超过预选的最大值，则第一和第二氧化物间隔物的宽度被修整 预先选择和用去离子水冲洗。 间隔宽度可以被微调，以减少弱重叠的风险，并通过较短的通道改善设备特性。