公开(公告)号：US20090039359A1

公开(公告)日：2009-02-12

申请号：US12123162

申请日：2008-05-19

Applicant: Yeo Jin YOON ,  Kyu Ho LEE ,  Sun Mo KIM ,  Ki Soo JOO

Inventor： Yeo Jin YOON ,  Kyu Ho LEE ,  Sun Mo KIM ,  Ki Soo JOO

IPC: H01L33/00

CPC classification number: H01L33/382 ,  H01L33/44

Abstract: Disclosed is a light emitting diode (LED) for enhancing the current spreading performance. The LED includes a plurality of contact holes exposing an N-type semiconductor layer through a P-type semiconductor layer and an active layer, and a connection pattern electrically connecting exposed portions of the N-type semiconductor layer through the contact holes, thereby enhancing current spreading in the N-type semiconductor layer. In addition, disclosed is an LED including a plurality of light emitting cells spaced apart from one another on an N-type semiconductor layer and an N-contact layer between the light emitting cells. A plurality of light emitting cells are employed in the LED, so that current can be spread in the LED.

Abstract translation: 公开了一种用于增强电流扩展性能的发光二极管（LED）。 LED包括通过P型半导体层和有源层露出N型半导体层的多个接触孔，以及通过接触孔电连接N型半导体层的暴露部分的连接图案，从而增强电流 在N型半导体层中扩展。 此外，公开了包括在N型半导体层上彼此间隔开的多个发光单元和发光单元之间的N接触层的LED。 在LED中采用多个发光单元，从而可以在LED中扩展电流。