公开(公告)号：US20210391460A1

公开(公告)日：2021-12-16

申请号：US17409078

申请日：2021-08-23

Applicant: Texas Instruments Incorporated

Inventor： Ming-Yeh Chuang

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/40

Abstract: A semiconductor device includes an extended drain finFET. The drain drift region of the finFET extends between a drain contact region and a body of the finFET. The drain drift region includes an enhanced portion of the drain drift region between the drain contact region and the body. The drain drift region also includes a first charge balance region and a second charge balance region laterally adjacent to, and on opposite sides of, the enhanced portion of the drain drift region. The enhanced portion of the drain drift region and the drain contact region have a first conductivity type; the body, the first charge balance region, and the second charge balance region have a second, opposite, conductivity type. The drain drift region is wider than the body.

公开(公告)号：US10586730B2

公开(公告)日：2020-03-10

申请号：US16010691

申请日：2018-06-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ming-Yeh Chuang

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L21/761 ,  H01L29/40 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

Abstract: An electronic device includes an isolated region surrounded by an isolation ring over a semiconductor substrate. A well of a first conductivity type is located within the isolated region. A source region and a drain region of a second conductivity type are located over the well. A local-oxidation-of-silicon (LOCOS) layer is located on the well between the source and the drain, between the source and the isolation ring, and between the drain and the isolation ring. A gate electrode located between the source and the drain on said LOCOS layer.