公开(公告)号：US20210210462A1

公开(公告)日：2021-07-08

申请号：US16734836

申请日：2020-01-06

Applicant: Texas Instruments Incorporated

Inventor： Vivek Swaminathan Sridharan ,  Enis Tuncer ,  Christopher Daniel Manack ,  Patrick Francis Thompson

IPC: H01L23/00

Abstract: A semiconductor device includes a semiconductor surface having circuitry with metal interconnect layers over the semiconductor surface including a selected metal interconnect layer providing an interconnect trace having a first and second end. A top dielectric layer is on the top metal interconnect layer. A redistribution layer (RDL) is on the top dielectric layer. A corrosion interruption structure (CIS) including the interconnect trace bridges an interrupting gap in a trace of the RDL.