公开(公告)号：US20050106766A1

公开(公告)日：2005-05-19

申请号：US11000895

申请日：2004-12-02

申请人： Ki-sung Kim ,  Yong-jo Park

发明人： Ki-sung Kim ,  Yong-jo Park

IPC分类号： H01L21/00 ,  H01S5/00 ,  H01S5/183 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0014 ,  H01S5/183 ,  H01S5/34306 ,  H01S2304/04 ,  Y10S438/905

摘要： Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in which a substrate on which the lower Al-containing semiconductor material layer is stacked is loaded. During the thermal cleaning process, the inside of the deposition reactor is thermally treated at a predetermined temperature in an atmosphere of a gas mixture of AsH3 and H2 that is injected into the deposition reactor.

摘要翻译： 提供一种制造包括下部含Al半导体材料层，有源层和上部含Al半导体材料层的激光二极管的方法。 该方法包括对其中装载有含下层的含Al半导体材料层的基板被加载的沉积反应器的内部进行热清洗。 在热清洗过程中，将沉积反应器的内部在预定温度下在注入到AsH 3和H 2的气体混合物的气氛中进行热处理 沉积反应器。