公开(公告)号：US09129988B1

公开(公告)日：2015-09-08

申请号：US14555439

申请日：2014-11-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Yang Lee ,  Ting-Yeh Chen ,  Chia-Ling Chan ,  Chien-Tai Chan

IPC: H01L21/00 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/785

Abstract: A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin structure and a doped region in the fin structure and adjacent to the recess. The gate protrudes from the recess and across over the fin structure. The source-drain region is in the fin structure and adjacent to the doped region. Methods for forming the FinFET are also provided.

Abstract translation: FinFET包括鳍结构，栅极和源极 - 漏极区域。 翅片结构在衬底之上，并且具有翅片结构的上表面的凹部和鳍结构中的与凹部相邻的掺杂区域。 门从凹槽突出并跨过翅片结构。 源极 - 漏极区域处于鳍状结构并且与掺杂区域相邻。 还提供了形成FinFET的方法。