公开(公告)号：US20220068719A1

公开(公告)日：2022-03-03

申请号：US17008045

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sung-Hsin Yang ,  Jung-Chi Jeng ,  Ru-Shang Hsiao

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L27/088

Abstract: Semiconductor devices and methods of forming the same are provided. An example method includes providing a workpiece including a first dummy gate stack and a second dummy gate stack in a first area of the workpiece, a third dummy gate stack and a fourth dummy gate stack in a second area of the workpiece, a hard mask layer over each of the first dummy gate stack, the second dummy gate stack, the third dummy gate stack, and the fourth dummy gate stack. The method further includes depositing a photoresist (PR) layer over the workpiece to form a first PR layer portion over the first area and a second PR layer portion over the second area; and selectively forming a first opening through the second PR layer portion over the third dummy gate stack and a second opening through the second PR layer portion over the fourth dummy gate stack.

公开(公告)号：US20210202321A1

公开(公告)日：2021-07-01

申请号：US16942514

申请日：2020-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sung-Hsin Yang ,  Jung-Chi Jeng ,  Ru-Shang Hsiao

IPC: H01L21/8234 ,  H01L27/088

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a substrate including a core device region and an input/output (I/O) device region, a plurality of core devices in the core device region, each of the plurality of core devices including a first active region extending along a first direction, and a first plurality of input/output (I/O) transistors in the I/O device region, each of the first plurality of I/O transistors including a second active region extending along the first direction. The first active region includes a first width along a second direction perpendicular to the first direction and the second active region includes a second width along the second direction. The second width is greater than the first width.