公开(公告)号：US20210351034A1

公开(公告)日：2021-11-11

申请号：US17379161

申请日：2021-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shao-Kuan Lee ,  Hsin-Yen Huang ,  Yung-Hsu Wu ,  Cheng-Chin Lee ,  Hai-Ching Chen ,  Shau-Lin Shue

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/522

Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.