Magnetoresistance effect type head having a damage immune film structure
    22.
    发明授权
    Magnetoresistance effect type head having a damage immune film structure 失效
    具有损伤免疫膜结构的磁阻效应型头

    公开(公告)号:US5327313A

    公开(公告)日:1994-07-05

    申请号:US922472

    申请日:1992-07-31

    IPC分类号: G11B5/39 G11B5/127

    CPC分类号: G11B5/3932 G11B5/3903

    摘要: A magnetoresistance effect type head including a ceramic substrate, a first magnetic film provided on the ceramic substrate, a second magnetic film provided above the first magnetic film, first and second insulating films provided between the first and second magnetic films, a magnetoresistance effect type film provided between the first and second insulating films, a bias film provided between the first and second insulating films in contact with the magnetoresistive film for applying magnetic field to the magnetoresistive film, a first conductive film provided between the first and second insulating films and above the bias film to be nearly as thick as the mean free path of free electrons, and a second conductive film of an electrode structure mutually separated between the first and second insulating films in contact with the first conductive film. The first conductive film is a nickel-chromium film or a chromium film which is resistive to a fluorocarbon-series gas to be used for etching. The second conductive film is made of a metal which is etched with a fluorocarbon-series gas and which has a thickness of 200 nm or more. The bias film and the magnetoresistance effect type film are protected from over-etching. The second conductive layer is made up of two metallic layers having contact tightness with the second insulating film and a third metallic layer which is sandwiched between the two metallic layers and which has a conductivity larger than the two metallic layers and also a thickness larger than the two metallic layers.

    摘要翻译: 一种磁阻效应型头,包括陶瓷基板,设置在陶瓷基板上的第一磁性膜,设置在第一磁性膜上方的第二磁性膜,设置在第一和第二磁性膜之间的第一和第二绝缘膜,磁阻效应型膜 设置在所述第一绝缘膜和所述第二绝缘膜之间的偏置膜,设置在与所述磁阻膜接触的所述第一和第二绝缘膜之间用于对所述磁阻膜施加磁场的偏置膜,设置在所述第一绝缘膜和所述第二绝缘膜之间的第一导电膜, 偏置膜几乎与自由电子的平均自由程相同,以及在与第一导电膜接触的第一和第二绝缘膜之间相互分离的电极结构的第二导电膜。 第一导电膜是耐蚀刻用氟碳系气体的镍铬膜或铬膜。 第二导电膜由用碳氟化合物系列气体蚀刻并且厚度为200nm以上的金属制成。 保护偏置膜和磁阻效应型膜免受过蚀刻。 第二导电层由与第二绝缘膜具有接触紧密度的两个金属层和夹在两个金属层之间的导电率大于第二绝缘膜的第三金属层构成,并且具有比两个金属层更大的导电性, 两层金属层。