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21.发明授权Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise 有权静电放电保护结构能够防止由意外的噪音引起的闩锁问题公开(公告)号：US09142545B2
公开(公告)日：2015-09-22
申请号：US14181740
申请日：2014-02-17
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yi-Chun Chen , Li-Cih Wang , Lu-An Chen , Tien-Hao Tang
CPC classification number: H01L27/0262 , H01L27/0259 , H01L27/0921
Abstract: The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type conductivity disposed in the N-well, a second doped region of N-type conductivity disposed in the N-well, a third doped region of P-type conductivity disposed in the N-well, a fifth doped region of P-type conductivity disposed in the P-well, a fourth doped region of N-type conductivity disposed between the third doped region and the fifth doped region in the P-well, an anode electrically connected to the first doped region and the second doped region, and a cathode electrically connected to the fourth doped region and the fifth doped region.
Abstract translation: 静电放电保护结构包括设置在衬底上的N阱，设置在衬底上并与N阱相邻的P阱，设置在N阱中的N型导电性的第一掺杂区，第二掺杂 设置在N阱中的N型导电性区域，设置在N阱中的P型导电体的第三掺杂区域，设置在P阱中的P型导电性的第五掺杂区域，第四掺杂区域 设置在P阱中的第三掺杂区域和第五掺杂区域之间的N型导电体，与第一掺杂区域和第二掺杂区域电连接的阳极，以及电连接到第四掺杂区域和第五掺杂区域的阴极 地区。
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22.发明申请ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE 有权静电放电保护结构可防止由意外噪声引起的闭锁问题公开(公告)号：US20150236010A1
公开(公告)日：2015-08-20
申请号：US14181740
申请日：2014-02-17
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yi-Chun Chen , Li-Cih Wang , Lu-An Chen , Tien-Hao Tang
CPC classification number: H01L27/0262 , H01L27/0259 , H01L27/0921
Abstract: The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type conductivity disposed in the N-well, a second doped region of N-type conductivity disposed in the N-well, a third doped region of P-type conductivity disposed in the N-well, a fifth doped region of P-type conductivity disposed in the P-well, a fourth doped region of N-type conductivity disposed between the third doped region and the fifth doped region in the P-well, an anode electrically connected to the first doped region and the second doped region, and a cathode electrically connected to the fourth doped region and the fifth doped region.
Abstract translation: 静电放电保护结构包括设置在衬底上的N阱，设置在衬底上并与N阱相邻的P阱，设置在N阱中的N型导电性的第一掺杂区，第二掺杂 设置在N阱中的N型导电性区域，设置在N阱中的P型导电体的第三掺杂区域，设置在P阱中的P型导电性的第五掺杂区域，第四掺杂区域 设置在P阱中的第三掺杂区域和第五掺杂区域之间的N型导电体，与第一掺杂区域和第二掺杂区域电连接的阳极，以及电连接到第四掺杂区域和第五掺杂区域的阴极 地区。
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