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公开(公告)号：US07261118B2
公开(公告)日：2007-08-28
申请号：US10902778
申请日：2004-08-02
申请人： Charles Michael Birtcher , Richard J. Dunning , Robert Daniel Clark , Arthur Kenneth Hochberg , Thomas Andrew Steidl
发明人： Charles Michael Birtcher , Richard J. Dunning , Robert Daniel Clark , Arthur Kenneth Hochberg , Thomas Andrew Steidl
IPC分类号： F17D1/00
CPC分类号： C23C16/4481 , Y10T137/0391 , Y10T137/4891
摘要： Vessel and method for the production and delivery of a precursor-containing fluid stream comprising the gaseous phase of a precursor material are disclosed herein. In one aspect, there is provided an vessel comprising: an interior volume wherein the interior volume is segmented into an upper volume and a lower volume wherein the upper volume and the lower volume are in fluid communication; a lid comprising a fluid inlet, a fluid outlet, an optional fill port, and an internal recess wherein at least a portion of the upper volume resides within the internal recess; a sidewall interposed between the lid and a base; and at least one protrusion that extends into the lower volume wherein the precursor is in contact with the at least one protrusion and wherein at least one protrusion extends from at least one selected from the lid, the sidewall, the base, and combinations thereof.
摘要翻译： 本文公开了用于生产和递送包含前体材料的气相的含前体流体物流的容器和方法。 在一个方面，提供了一种容器，包括：内部容积，其中内部容积被分段成上部体积和下部体积，其中上部体积和下部体积是流体连通的; 包括流体入口，流体出口，可选的填充口和内部凹部的盖子，其中上部容积的至少一部分位于内部凹部内; 插入在盖和基座之间的侧壁; 以及至少一个延伸到所述下部体积中的突起，其中所述前体与所述至少一个突起接触，并且其中至少一个突起从选自所述盖，所述侧壁，所述基座及其组合中的至少一个延伸。
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公开(公告)号：US07122222B2
公开(公告)日：2006-10-17
申请号：US10695379
申请日：2003-10-27
CPC分类号： H01L21/3185 , C07F7/10 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/0226 , H01L21/02271 , H01L21/02274 , H01L21/3125
摘要： Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
摘要翻译： 使用下式的肼基硅烷在硅衬底上沉积氮化硅，氧化硅和氮氧化硅的硅介电沉积前体的方法：<？in-line-formula description =“In-line formula”end =“lead”？> [R 4 N-N N 2 N 2 N n N 2 N 2 N 2 N n N 2 N 2 N n N <？in-line-formula description =“In-line formula”end =“tail”？>其中每个R 1独立地选自C 1〜C的烷基至 C 6 < 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。 一些肼基甲硅烷是新型前体。
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公开(公告)号：US06844271B2
公开(公告)日：2005-01-18
申请号：US10444217
申请日：2003-05-23
IPC分类号： C23C16/34 , C23C16/30 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/318 , H01L21/31
CPC分类号： C23C16/45514 , C23C16/308 , H01L21/3144 , H01L21/3145
摘要： This invention relates to a chemical vapor deposition process for forming Zr or Hf oxynitride films suitable for use in electronic applications such as gate dielectrics. The process comprises: a. delivering a Zr or Hf containing precursor in gaseous form to a chemical vapor deposition chamber, and, b. simultaneously delivering an oxygen source and a nitrogen source to the chamber separately, such that mixing of these sources with the precursor does not take place prior to delivery to the chamber, and, c. contacting the resultant reaction mixture with a substrate in said chamber, said substrate heated to an elevated temperature to effect deposition of the Zr or Hf oxynitride film, respectively. A silicon containing precursor may be added simultaneously to the chamber for forming Zr or Hf silicon oxynitride films.
摘要翻译： 本发明涉及一种用于形成适用于诸如栅极电介质的电子应用中的Zr或Hf氧氮化物膜的化学气相沉积工艺。 该过程包括：a。 将具有气态形式的含Zr或Hf的前驱体输送到化学气相沉积室，以及b。 同时将氧源和氮源分别输送到腔室，使得这些源与前体的混合在输送到室之前不发生，以及c。 使所得反应混合物与所述室中的基底接触，将所述基底加热至高温，以分别实现Zr或Hf氧氮化物膜的沉积。 可以将含硅前体同时加入到室中以形成Zr或Hf氮氧化硅膜。
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