Method for forming an insulating film
    32.
    发明授权
    Method for forming an insulating film 有权
    绝缘膜的形成方法

    公开(公告)号:US06187692B1

    公开(公告)日:2001-02-13

    申请号:US09187112

    申请日:1998-11-05

    Abstract: A method for forming an insulating layer to solve a problem of non-uniform thickness of the insulating layer is provided. The method includes forming a first insulating layer over a substrate preferably by chemical vapor deposition (CVD) at an operation temperature of about 200° C.-350° C. The thickness of the first insulating layer is about 500 Å-5000 Å. A second insulating layer is formed over the first insulating layer preferably by CVD at a temperature of about 350° C.-500° C. The thickness of the second insulating layer is about 1000 Å-10000 Å. The first and the second insulating layers form together as an insulating layer to insulate transistors and isolation structures from the interconnect metal layer.

    Abstract translation: 提供一种用于形成绝缘层以解决绝缘层的不均匀厚度的问题的方法。 该方法包括在约200℃-350℃的操作温度下优选通过化学气相沉积(CVD)在衬底上形成第一绝缘层。第一绝缘层的厚度为约500至5000。 优选通过CVD在约350℃-500℃的温度下在第一绝缘层上形成第二绝缘层。第二绝缘层的厚度为约1000埃。 第一和第二绝缘层一起形成绝缘层,以使晶体管和隔离结构与互连金属层绝缘。

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