公开(公告)号：US20160268121A1

公开(公告)日：2016-09-15

申请号：US15161903

申请日：2016-05-23

申请人： President and Fellows of Harvard College

发明人： Roy Gerald GORDON ,  Jill S. BECKER ,  Dennis HAUSMANN ,  Seigi SUH

IPC分类号： H01L21/02 ,  H01L29/423 ,  H01L29/51 ,  H01L49/02

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

摘要翻译： 金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。 例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。 类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

公开(公告)号：US09343295B2

公开(公告)日：2016-05-17

申请号：US14281242

申请日：2014-05-19

申请人： Tokyo Electron Limited

发明人： Ikuo Sawada ,  Sumie Nagaseki ,  Kyoko Ikeda ,  Tatsuro Ohshita

IPC分类号： H01H21/02 ,  H01L21/02 ,  C23C16/448 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02271 ,  C23C16/4486 ,  H01L21/02181 ,  H01L21/31612 ,  H01L21/31645 ,  H01L21/3185

摘要： A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

摘要翻译： 蒸发单元在将通过将液体材料蒸发到基板上以进行成膜处理而生成的气体材料的情况下，可以高效率地蒸发液体材料，以抑制颗粒的产生。 利用蒸发单元，在液体材料中产生直径为1000nm以下的带正电荷或带负电荷的泡沫，液体材料被雾化以形成液体材料的雾。 此外，液体材料的雾被加热和蒸发。 微细气泡预先均匀地分散在液体材料中，从而当液体材料雾化时产生液体材料的非常细小且均匀的雾状颗粒，这使得热交换容易进行。 通过蒸发液体材料的雾，提高了蒸发效率，并且可以抑制颗粒的产生。

公开(公告)号：US09269566B2

公开(公告)日：2016-02-23

申请号：US14661970

申请日：2015-03-18

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  C23C16/455 ,  H01L21/316 ,  H01L21/02 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.

公开(公告)号：US20150332913A1

公开(公告)日：2015-11-19

申请号：US14802904

申请日：2015-07-17

申请人： Micron Technology, Inc.

发明人： Shyam Surthi

IPC分类号： H01L21/02 ,  C23C16/46 ,  C23C16/455

CPC分类号： H01L21/31612 ,  C23C16/402 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3141

摘要： Some embodiments include methods for semiconductor processing. A semiconductor substrate may be placed within a reaction chamber. The semiconductor substrate may have an inner region and an outer region laterally outward of said inner region, and may have a deposition surface that extends across the inner and outer regions. The semiconductor substrate may be heated by radiating thermal energy from the outer region to the inner region. The heating may eventually achieve thermal equilibrium. However, before thermal equilibrium of the outer and inner regions is reached, and while the outer region is warmer than the inner region, at least two reactants are sequentially introduced into the reaction chamber. The reactants may together form a single composition on the deposition surface through a quasi-ALD process.

摘要翻译： 一些实施例包括用于半导体处理的方法。 半导体衬底可以放置在反应室内。 半导体衬底可以具有在所述内部区域的横向外侧的内部区域和外部区域，并且可以具有延伸穿过内部区域和外部区域的沉积表面。 可以通过从外部区域向内部区域辐射热能来加热半导体衬底。 加热可能最终实现热平衡。 然而，在达到外部和内部区域的热平衡之前，并且当外部区域比内部区域更热时，至少两个反应物被顺序地引入反应室。 反应物可以通过准ALD工艺在沉积表面上一起形成单一的组合物。

公开(公告)号：US09184061B2

公开(公告)日：2015-11-10

申请号：US11493967

申请日：2006-07-27

申请人： Brian A. Vaartstra

发明人： Brian A. Vaartstra

IPC分类号： H01L29/78 ,  H01L21/316 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/314

CPC分类号： H01L21/31645 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3142 ,  H01L21/31612 ,  H01L21/31641

摘要： A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4 with one or more zirconium and/or hafnium precursor compounds of the formula M(NR′R″)4, wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium.

摘要翻译： 使用气相沉积工艺和一种或多种式Si（OR）的硅前体化合物在基材，特别是半导体衬底或衬底组件上形成（和用于形成）锆和/或铪的层的方法， 4与一种或多种式M（NR'R“）4的锆和/或铪前体化合物，其中R，R'和R”各自独立地为有机基团，M为锆或铪。

公开(公告)号：US20150118395A1

公开(公告)日：2015-04-30

申请号：US14587909

申请日：2014-12-31

申请人： President and Fellows of Harvard College

发明人： Roy Gerald GORDON ,  Jill S. BECKER ,  Dennis HAUSMANN ,  Seigi SUH

IPC分类号： C23C16/30 ,  C01B33/26 ,  C01B25/36 ,  C01B25/30 ,  C23C16/40 ,  C01G25/02 ,  C01G35/00 ,  C01B33/12 ,  C23C16/455 ,  C01B33/20 ,  C01G27/02

CPC分类号： H01L21/02159 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02112 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

摘要翻译： 金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。 例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。 类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

公开(公告)号：US09011601B2

公开(公告)日：2015-04-21

申请号：US14329355

申请日：2014-07-11

申请人： Hitachi Kokusai Electric Inc.

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L21/02 ,  C23C16/455 ,  H01L49/00

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.

摘要翻译： 一种基板处理装置，其能够通过在基板上形成层来形成氧化膜，所述基板通过经由所述第一喷嘴将原料气体供给到容纳所述基板的处理容器中，同时通过第二喷嘴供给含氧气体， 含氢气体通过第一喷嘴进入处理容器，其内压低于大气压; 在所述处理容器内的非等离子体气氛中使所述含氧气体与所述含氢气体混合和反应以产生原子氧; 并且用原子氧氧化该层以将该层改变为氧化物层。

公开(公告)号：US08956457B2

公开(公告)日：2015-02-17

申请号：US11517358

申请日：2006-09-08

申请人： Eric M. Lee ,  Junjun Liu ,  Dorel I. Toma

发明人： Eric M. Lee ,  Junjun Liu ,  Dorel I. Toma

IPC分类号： C23C16/00 ,  B05B5/00 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/67115 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31612 ,  H01L21/31695

摘要： A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and UV light-emitting devices (LEDs) configured to irradiate a substrate having a low dielectric constant (low-k) film. The method dries the dielectric film to remove contaminants from the film and exposes the dielectric film at a single stage to ultraviolet radiation and IR radiation.

摘要翻译： 一种用于固化电介质膜的热处理系统和方法。 热处理系统被配置为用紫外（UV）辐射和红外（IR）辐射来处理电介质膜，以便固化电介质膜。 如果IR和UV发光器件（LED）被配置为照射具有低介电常数（低k）膜的衬底，则热处理系统可以包括阵列。 该方法干燥电介质膜以从膜中去除污染物并将介电膜在单一阶段暴露于紫外线和IR辐射。

公开(公告)号：US08809204B2

公开(公告)日：2014-08-19

申请号：US13666272

申请日：2012-11-01

申请人： Hitachi Kokusai Electric, Inc.

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  C23C16/455 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate an atomic oxygen, and oxidizing the element-containing layer by the atomic oxygen.

摘要翻译： 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内部压力低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含有气体以产生原子氧，并且通过原子氧氧化含元素层。

公开(公告)号：US08759952B2

公开(公告)日：2014-06-24

申请号：US13358365

申请日：2012-01-25

申请人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

发明人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

IPC分类号： H01L23/58

CPC分类号： H01L21/3105 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837

摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。