公开(公告)号：US4845541A

公开(公告)日：1989-07-04

申请号：US204959

申请日：1988-06-06

申请人： Jingming Xu ,  Michael Shur

发明人： Jingming Xu ,  Michael Shur

IPC分类号： H01L29/08 ,  H01L29/205

CPC分类号： H01L29/205 ,  H01L29/0895

摘要： A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The barrier layer exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.

摘要翻译： 双极晶体管具有介于其基极和发射极之间的阻挡层。 阻挡层由与基极和发射极不同的较宽的带隙，半导体材料形成，并具有与发射极相同的导电类型。 阻挡层在有效电子质量和有效整体质量上表现出很大的差异，并且对多数载体呈现小的阻挡。 隧道射极双极晶体管具有相当的电流增益，同时具有比传统异质结双极晶体管更好的温度稳定性，更低的光灵敏度和更低的发射极电阻（导致更高的截止频率）。