公开(公告)号：US20110278258A1

公开(公告)日：2011-11-17

申请号：US12779687

申请日：2010-05-13

Applicant: Sam Kavusi ,  Yi Wei Chen ,  Michael Chen ,  Christoph Lang

Inventor： Sam Kavusi ,  Yi Wei Chen ,  Michael Chen ,  Christoph Lang

IPC: C23F1/00 ,  G06F17/00 ,  G05B15/02 ,  G01N1/00 ,  B01J19/00

CPC classification number: G01N33/54306 ,  G01N33/54366 ,  G01N33/54393 ,  Y10T436/25

Abstract: A system and method of indirectly modifying an environmental condition at a test site in one embodiment includes providing a test site on a substrate, providing a first activatable stimulant at the test site, providing an actuator configured to activate the first activatable stimulant at the test site, controlling the actuator to activate the first activatable stimulant, and modifying the local chemical environment at the test site with the first activated stimulant.

Abstract translation: 在一个实施方案中间接改变测试部位环境条件的系统和方法包括在基底上提供测试部位，在测试部位提供第一可激活的刺激剂，提供构造成在测试部位激活第一可活化刺激物的致动器 控制致动器来激活第一可激活的兴奋剂，以及用第一个激活的兴奋剂改变测试部位的局部化学环境。

公开(公告)号：US20100219821A1

公开(公告)日：2010-09-02

申请号：US12396204

申请日：2009-03-02

Applicant: Thomas Rocznik ,  Christoph Lang ,  Sam Kavusi

Inventor： Thomas Rocznik ,  Christoph Lang ,  Sam Kavusi

IPC: G01R33/06 ,  H01L47/00

CPC classification number: H01L43/065 ,  G01R33/07 ,  G01R33/077

Abstract: A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.

Abstract translation: 在一个实施例中，互补的金属氧化物半导体（CMOS）传感器系统包括沿着掺杂衬底的第一轴延伸的掺杂阱，位于掺杂阱内的第一电触点，位于掺杂阱内并与之隔开的第二电触点 沿着第一轴线的第一电触头，位于掺杂阱内并位于第一电触点和第二电触点之间的第三电触头沿着第一轴线，以及第四电触点，其电耦合到位于 掺杂深度低于第三电接触。