公开(公告)号：US20060054927A1

公开(公告)日：2006-03-16

申请号：US11143861

申请日：2005-06-03

Applicant: Wen-Kai Wang ,  Jin-Wei Shi ,  Yi-Jen Chan

Inventor： Wen-Kai Wang ,  Jin-Wei Shi ,  Yi-Jen Chan

IPC: H01L31/0328

CPC classification number: G01L9/0098 ,  G01L9/0042 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/812

Abstract: The present invention uses a GaN transistor grown over a Si substrate, which is obtained by etching through lithography or a plasma etching; and is used as a pressure sensor with great sensitivity by utilizing the characteristic of piezoelectric effect of GaN with the ability of magnifying signals and providing very high sensitivity; and is integrated into an IC, or into a micro electro-mechanical system of Si semiconductor.

Abstract translation: 本发明使用通过光刻或等离子体蚀刻蚀刻而获得的在Si衬底上生长的GaN晶体管; 并利用GaN的压电效应特性，具有放大信号的能力，提供极高的灵敏度，作为高灵敏度的压力传感器; 并且被集成到IC或Si半导体的微机电系统中。

公开(公告)号：US06353366B1

公开(公告)日：2002-03-05

申请号：US09559584

申请日：2000-04-28

Applicant: Yi-Jen Chan ,  Feng-Tso Chien ,  Tien-Tsorng Shin ,  Wen-Jeng Ho

Inventor： Yi-Jen Chan ,  Feng-Tso Chien ,  Tien-Tsorng Shin ,  Wen-Jeng Ho

IPC: H03F304

CPC classification number: H03F1/483 ,  H03F3/082

Abstract: A bandwidth enhancement method by adding a peaking capacitor to a transimpedance amplifier for creating peaking effect is to add a peaking capacitor to a transimpedance amplifier for obtaining an extra pole that can alter circuit phase and enhance bandwidth of the transimpedance amplifier without changing the framework and DC gain of the original amplifier circuit.

Abstract translation: 通过将峰值电容器添加到跨阻放大器以产生峰值效应的带宽增强方法是将峰值电容器添加到跨阻抗放大器，以获得可以改变电路相位并增强跨阻抗放大器的带宽的额外极点，而不改变框架和DC 原始放大器电路的增益。