BUTTON ASSEMBLY AND COMPUTER MOUSE HAVING THE SAME
    31.
    发明申请
    BUTTON ASSEMBLY AND COMPUTER MOUSE HAVING THE SAME 失效
    按钮组合和计算机鼠标

    公开(公告)号:US20100090952A1

    公开(公告)日:2010-04-15

    申请号:US12494315

    申请日:2009-06-30

    CPC classification number: G06F3/03543 H01H1/26 H01H3/60

    Abstract: A computer mouse includes a housing and a button assembly. The button assembly includes a button, a circuit board, a first conductive sheet, and a second conductive sheet. The button is exposed out of the housing. The circuit board is received in the housing, and includes a first contact and a second contact. The first conductive sheet has a first magnet fixed thereon, and is electrically connected to the first contact of the circuit board. The second conductive sheet is electrically connected to the second contact of the circuit board. The second conductive sheet is fixed to the button and contactable with the first conductive sheet when the button is pressed. The second magnet and the first magnet form a repulsive force therebetween.

    Abstract translation: 计算机鼠标包括壳体和按钮组件。 按钮组件包括按钮,电路板,第一导电片和第二导电片。 该按钮暴露在外壳外。 电路板被容纳在壳体中,并且包括第一触点和第二触点。 第一导电片具有固定在其上的第一磁体,并且电连接到电路板的第一触点。 第二导电片与电路板的第二触点电连接。 当按下按钮时,第二导电片固定到按钮并与第一导电片接触。 第二磁体和第一磁体之间形成排斥力。

    POWER STRIP
    32.
    发明申请
    POWER STRIP 失效
    电源板

    公开(公告)号:US20100055930A1

    公开(公告)日:2010-03-04

    申请号:US12542706

    申请日:2009-08-18

    CPC classification number: H01R13/72 H01R13/514 H01R25/003

    Abstract: A power strip is provided. The power strip includes a first power cord to receive an input of electricity. The power strip also includes a housing including a plurality of socket modules for receiving electrical plugs. At least one socket module is removably attached to the housing and includes a second power cord connect to the first power cord.

    Abstract translation: 提供电源板。 电源板包括用于接收电力输入的第一电源线。 电源板还包括壳体,其包括用于接收电插头的多个插座模块。 至少一个插座模块可移除地附接到壳体并且包括连接到第一电源线的第二电源线。

    Semiconductor devices with dual-metal gate structures and fabrication methods thereof
    33.
    发明授权
    Semiconductor devices with dual-metal gate structures and fabrication methods thereof 有权
    具有双金属栅极结构的半导体器件及其制造方法

    公开(公告)号:US07378713B2

    公开(公告)日:2008-05-27

    申请号:US11552704

    申请日:2006-10-25

    Abstract: Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.

    Abstract translation: 具有双金属栅极结构的半导体器件及其制造方法。 提供了具有由绝缘层分隔开的第一掺杂区域和第二掺杂区域的半导体衬底。 在第一掺杂区上形成第一金属栅叠层,在第二掺杂区上形成第二金属栅叠层。 密封层设置在第一栅极堆叠和第二栅极叠层的侧壁上。 第一金属栅叠层包括界面层,界面层上的高k电介质层,高k电介质层上的第一金属层,第一金属层上的金属插入层,金属上的第二金属层 插入层和第二金属层上的多晶硅层。 第二金属栅堆叠包括界面层,界面层上的高k电介质层,高k电介质层上的第二金属层和第二金属层上的多晶硅层。

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