Abstract:
A computer mouse includes a housing and a button assembly. The button assembly includes a button, a circuit board, a first conductive sheet, and a second conductive sheet. The button is exposed out of the housing. The circuit board is received in the housing, and includes a first contact and a second contact. The first conductive sheet has a first magnet fixed thereon, and is electrically connected to the first contact of the circuit board. The second conductive sheet is electrically connected to the second contact of the circuit board. The second conductive sheet is fixed to the button and contactable with the first conductive sheet when the button is pressed. The second magnet and the first magnet form a repulsive force therebetween.
Abstract:
A power strip is provided. The power strip includes a first power cord to receive an input of electricity. The power strip also includes a housing including a plurality of socket modules for receiving electrical plugs. At least one socket module is removably attached to the housing and includes a second power cord connect to the first power cord.
Abstract:
Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.