公开(公告)号：US06897516B2

公开(公告)日：2005-05-24

申请号：US10411451

申请日：2003-04-10

Applicant: Freidoon Mehrad ,  Suresh Potla ,  Zhihao Chen

Inventor： Freidoon Mehrad ,  Suresh Potla ,  Zhihao Chen

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: A method of forming a flash memory array structure includes forming a first dielectric layer outwardly from a semiconductor substrate, removing a portion of the first dielectric layer and the substrate to create a trench isolation region, forming a second dielectric layer in the trench isolation region, removing a portion of the second dielectric layer to create an exposed substrate region proximate a bottom of the trench isolation region, doping the exposed substrate region with an n-type dopant, and forming a silicide region in the exposed substrate region.

Abstract translation: 形成闪速存储器阵列结构的方法包括从半导体衬底向外形成第一介电层，去除第一电介质层和衬底的一部分以形成沟槽隔离区，在沟槽隔离区中形成第二电介质层， 去除所述第二电介质层的一部分以在所述沟槽隔离区域的底部附近产生暴露的衬底区域，用所述暴露的衬底区域掺杂所述暴露的衬底区域，以及在所述暴露的衬底区域中形成硅化物区域。

公开(公告)号：US06818526B2

公开(公告)日：2004-11-16

申请号：US10263511

申请日：2002-10-02

Applicant: Freidoon Mehrad ,  Zhihao Chen ,  Juanita Deloach

Inventor： Freidoon Mehrad ,  Zhihao Chen ,  Juanita Deloach

IPC: H01L21336

CPC classification number: H01L21/76224

Abstract: A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed outwardly of the first oxide layer. A second oxide layer is formed outwardly of the nitride layer. A trench is formed through the first oxide layer, the nitride layer, and the second oxide layer and into the semiconductor layer. With the second oxide layer protecting an upper surface of the nitride layer, the nitride layer is etched to form a lateral recessed side boundary of the trench at the nitride layer. The shallow trench isolation layer is formed in the trench.

Abstract translation: 制造浅沟槽隔离结构的方法包括在半导体层向外形成第一氧化物层。 在第一氧化物层的外部形成氮化物层。 在氮化物层的外侧形成第二氧化物层。 通过第一氧化物层，氮化物层和第二氧化物层形成沟槽并进入半导体层。 利用第二氧化物层保护氮化物层的上表面，蚀刻氮化物层以在氮化物层处形成沟槽的侧凹侧边界。 在沟槽中形成浅沟槽隔离层。