Adaptation of Analog Memory Cell Read Thresholds Using Partial ECC Syndromes
    31.
    发明申请
    Adaptation of Analog Memory Cell Read Thresholds Using Partial ECC Syndromes 有权
    使用部分ECC综合征适应模拟记忆单元读取阈值

    公开(公告)号:US20140201596A1

    公开(公告)日:2014-07-17

    申请号:US13743721

    申请日:2013-01-17

    Applicant: APPLE INC.

    Abstract: A method includes storing data that is encoded with an Error Correction Code (ECC) in a group of analog memory cells. The memory cells in the group are read using multiple sets of read thresholds. The memory cells in the group are divided into two or more subsets. N partial syndromes of the ECC are computed, each partial syndrome computed over readout results that were read using a respective set of the read thresholds from a respective subset of the memory cells. For each possible N-bit combination of N bit values at corresponding bit positions in the N partial syndromes, a respective count of the bit positions in which the combination occurs is determined, so as to produce a plurality of counts. An optimal set of read thresholds is calculated based on the counts, and data recovery is performed using the optimal read thresholds.

    Abstract translation: 一种方法包括将用错误校正码(ECC)编码的数据存储在一组模拟存储器单元中。 使用多组读取阈值读取组中的存储单元。 组中的存储单元被分成两个或多个子集。 计算ECC的N个部分综合征,在读出结果上计算每个部分校正子,这些读出结果使用来自存储器单元的相应子集的相应读取阈值集来读取。 对于N个部分综合征中的相应位位置的N个比特值的每个可能的N比特组合,确定组合发生的比特位置的相应计数,以产生多个计数。 基于计数计算出最佳读取阈值集,并且使用最佳读取阈值执行数据恢复。

Patent Agency Ranking