公开(公告)号：US20230193475A1

公开(公告)日：2023-06-22

申请号：US18068399

申请日：2022-12-19

Applicant: ASM IP Holding, B.V.

Inventor： Gregory Deye ,  Caleb Miskin ,  Hichem M'Saad ,  Steven Reiter ,  Alexandros Demos ,  Fei Wang

IPC: C23F1/12

CPC classification number: C23F1/12

Abstract: A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

公开(公告)号：US20210292902A1

公开(公告)日：2021-09-23

申请号：US17184290

申请日：2021-02-24

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Caleb Miskin

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/24 ,  C23C16/42 ,  C23C16/56

Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.