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公开(公告)号:US12006572B2
公开(公告)日:2024-06-11
申请号:US17060507
申请日:2020-10-01
Applicant: ASM IP Holding B.V.
Inventor: Xing Lin , Peipei Gao , Prajwal Nagaraj , Mingyang Ma , Wentao Wang , Ion Hong Chao , Alexandros Demos , Paul Ma , Hichem M'Saad
IPC: H01J37/32 , C23C16/40 , C23C16/455 , C23C16/50
CPC classification number: C23C16/45582 , C23C16/403 , C23C16/405 , C23C16/45536 , C23C16/45565 , C23C16/50 , H01J37/32357 , H01J37/3244
Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.
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公开(公告)号:US20230203706A1
公开(公告)日:2023-06-29
申请号:US18086734
申请日:2022-12-22
Applicant: ASM IP Holding B.V.
Inventor: Alexandros Demos , Hichem M'Saad , Xing Lin , Caleb Miskin , Shivaji Peddeti , Amir Kajbafvala
CPC classification number: C30B25/14 , C30B25/12 , C30B25/165 , C30B25/186 , C30B29/06 , C30B29/08
Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.
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公开(公告)号:US20230193475A1
公开(公告)日:2023-06-22
申请号:US18068399
申请日:2022-12-19
Applicant: ASM IP Holding, B.V.
Inventor: Gregory Deye , Caleb Miskin , Hichem M'Saad , Steven Reiter , Alexandros Demos , Fei Wang
IPC: C23F1/12
CPC classification number: C23F1/12
Abstract: A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.
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公开(公告)号:US20210102292A1
公开(公告)日:2021-04-08
申请号:US17060507
申请日:2020-10-01
Applicant: ASM IP Holding B.V.
Inventor: Xing Lin , Peipei Gao , Prajwal Nagaraj , Mingyang Ma , Wentao Wang , Ion Hong Chao , Alexandros Demos , Paul Ma , Hichem M'Saad
IPC: C23C16/455 , C23C16/40
Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.
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公开(公告)号:US20220349051A1
公开(公告)日:2022-11-03
申请号:US17729645
申请日:2022-04-26
Applicant: ASM IP Holding B.V.
Inventor: Amit Mishra , Jereld Lee Winkler , Moataz Bellah Mousa , Mustafa Muhammad , Paul Ma , Hichem M'Saad , Ying-Shen Kuo , Chad Lunceford , Shuaidi Zhang
Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.
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公开(公告)号:US20220298672A1
公开(公告)日:2022-09-22
申请号:US17697107
申请日:2022-03-17
Applicant: ASM IP Holding B.V.
Inventor: Hichem M'Saad , Alexandros Demos , Xing Lin , Junwei Su , Matthew Goodman , Daw Gen Lim , Shujin Huang , Rutvij Naik
IPC: C30B25/16 , H01L21/66 , C30B25/10 , C30B25/12 , C30B23/06 , C23C16/52 , C23C16/46 , C23C14/54 , F27B17/00 , H05B3/00 , H05B1/02 , G01J5/00
Abstract: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.
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