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公开(公告)号：US20200027738A1
公开(公告)日：2020-01-23
申请号：US16588235
申请日：2019-09-30
Applicant: Applied Materials, Inc.
Inventor： Yihong Chen , Yong Wu , Chia Cheng Chin , Srinivas Gandikota
IPC: H01L21/285 , H01L21/02 , H01L21/768 , H01L21/3205
Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.
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