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公开(公告)号：US20240122032A1
公开(公告)日：2024-04-11
申请号：US17637817
申请日：2021-04-21
发明人： Qinghe WANG , Bin ZHOU , Tongshang SU , Dacheng ZHANG , Jun WANG , Ning LIU , Yongchao HUANG , Jun CHENG , Liangchen YAN
CPC分类号： H10K59/80517 , H10K59/1201 , H10K59/80522 , H10K59/8731
摘要： A display substrate including a drive-circuit layer and a light-emitting structure layer, a preparation method thereof, and a display device, the light-emitting structure layer includes an anode, a pixel definition layer, an organic light-emitting layer and a cathode, and an auxiliary electrode and an organic light-emitting block, arranged sequentially, the pixel definition layer includes an anode opening exposing the anode and an electrode opening exposing the auxiliary electrode, the organic light-emitting block is separated from the organic light-emitting layer, the auxiliary electrode includes the first, second and third auxiliary electrodes arranged sequentially; the cathode includes a first horizontal lapping part lapping with the first auxiliary electrode and a second sidewall lapping part lapping with the second auxiliary electrode, the thickness of the second sidewall lapping part in the direction parallel to the substrate is greater than that of the first horizontal lapping part in the direction perpendicular to the substrate.
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公开(公告)号：US20230148287A1
公开(公告)日：2023-05-11
申请号：US17432217
申请日：2021-02-04
发明人： Ning LIU , Qinghe WANG , Liusong NI , Tao SUN , Bin ZHOU , Liangchen YAN
IPC分类号： H10K59/121 , H10K59/12
CPC分类号： H10K59/1216 , H10K59/1201
摘要： Disclosed are a displaying substrate, a manufacturing method thereof, and a display panel. The displaying substrate comprises: a first capacitor electrode at least partially located in luminous zones, a buffer layer covering the first capacitor electrode, and a second capacitor electrode and an active layer that are disposed on the buffer layer and do not overlap with each other, wherein the active layer is located in a non-luminous zone, and the first capacitor electrode, the buffer layer and the second capacitor electrode form a storage capacitor
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33.发明申请公开(公告)号：US20230086999A1
公开(公告)日：2023-03-23
申请号：US17801003
申请日：2021-10-12
发明人： Tongshang SU , Jun CHENG , Bin ZHOU , Ce ZHAO , Qinghe WANG , Jun WANG , Liangchen YAN
摘要： Provided are a gate driving circuit and a manufacturing method therefor, an array substrate, and a display device, relating to the technical field of display. At least one transistor in the gate driving circuit comprises a first light-shielding layer made of an electrically conductive material, and the first light-shielding layer is connected to a first gate metal layer of the transistor, such that two electrically conductive channels are formed, and the ON-state current is increased, thereby effectively suppressing negative drift of a threshold voltage.
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公开(公告)号：US20220293709A1
公开(公告)日：2022-09-15
申请号：US17625029
申请日：2021-04-08
发明人： Tongshang SU , Jun CHENG , Qinghe WANG , Yongchao HUANG , Chao WANG , Zhiwen LUO , Liangchen YAN
摘要： The present disclosure provides an array substrate, a manufacturing method thereof, and a display device including the array substrate. The array substrate includes a substrate, a first electrode on the substrate, a light-emitting layer on a side of the first electrode away from the substrate, a second electrode on a side of the light-emitting layer away from the first electrode, and an auxiliary electrode on the side of the light-emitting layer away from the first electrode and electrically connected with the second electrode.
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公开(公告)号：US20220173125A1
公开(公告)日：2022-06-02
申请号：US17349164
申请日：2021-06-16
发明人： Haitao WANG , Jun CHENG , Ming WANG , Qinghe WANG , Jun WANG , Tongshang SU
摘要： The disclosure discloses an array substrate and a preparation method thereof, a display panel and a display device. The array substrate includes: a substrate, and a first metal layer, a metal oxide layer and a second metal layer which are sequentially stacked and isolated from each other on the substrate; the first metal layer includes a light shading metal, a first electrode, and an anti-static line; the metal oxide layer includes a first active layer; the second metal layer includes a gate line and a second electrode; the gate line is connected with the anti-static line through a first TFT, one of the first electrode and the second electrode forms the source and drain electrodes of the first TFT, and the other forms the gate electrode of the first TFT; and the source is electrically connected with the gate line, and the drain is electrically connected with the anti-static line.
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公开(公告)号：US20220064783A1
公开(公告)日：2022-03-03
申请号：US17501383
申请日：2021-10-14
发明人： Tongshang SU , Dongfang WANG , Leilei CHENG , Jun LIU , Ning LIU , Qinghe WANG , Liangchen YAN
摘要： A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.
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公开(公告)号：US20210267053A1
公开(公告)日：2021-08-26
申请号：US17183909
申请日：2021-02-24
发明人： Yongchao HUANG , Qinghe WANG , Haitao WANG , Jun LIU , Jun CHENG , Ce ZHAO , Liangchen YAN
摘要： The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.
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38.发明申请公开(公告)号：US20210227656A1
公开(公告)日：2021-07-22
申请号：US16756467
申请日：2019-10-21
发明人： Qinghe WANG , Dongfang WANG , Tongshang SU , Ning LIU , Guangyao LI , Yongchao HUANG , Yang ZHANG , Jiawen SONG , Zhiwen LUO , Liangchen YAN
IPC分类号： H05B45/18 , H01L29/786 , H01L31/12 , H01L29/49 , H01L29/423 , H01L27/32
摘要： A thin-film transistor includes: an active layer having a first side and a second side opposing to the first side; a main gate electrode spaced from the active layer on the first side, and including a conductive material; an auxiliary gate electrode spaced from the active layer on the second side, wherein the auxiliary gate electrode includes a phase change material having a phase change temperature; the auxiliary gate electrode is configured to have a transition between insulating and conductive based on a temperature of the auxiliary gate electrode; and the main gate electrode and the auxiliary gate electrode are electrically coupled to each other when the auxiliary gate electrode is conductive.
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39.发明申请公开(公告)号：US20210134852A1
公开(公告)日：2021-05-06
申请号：US16652219
申请日：2019-10-18
发明人： Tongshang SU , Dongfang WANG , Qinghe WANG , Liangchen YAN
IPC分类号： H01L27/12
摘要： The present disclosure provides a thin film transistor, a display substrate, a method for preparing the same, and a display device including the display substrate. The method for preparing the thin film transistor includes: forming an inorganic insulating film layer in contact with an electrode of the thin film transistor by a plasma enhanced chemical vapor deposition process at power of 9 kW to 25 kW, at a temperature of 190° C. to 380° C. and by using a mixture of gases N2, NH3 and SiH4 in a volume ratio of N2:NH3:SiH4=(10˜20):(5˜10):(1˜2), such that a stress value of the inorganic insulating film layer is reduced to be less than or equal to a threshold, and the inorganic insulating layer comprises silicon nitride.
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公开(公告)号：US20210074946A1
公开(公告)日：2021-03-11
申请号：US17051323
申请日：2020-03-02
发明人： Leilei CHENG , Tongshang SU , Qinghe WANG , Guangyao LI , Wei SONG , Ning LIU , Yang ZHANG , Yongchao HUANG
摘要： The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.
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