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公开(公告)号：US20100187747A1
公开(公告)日：2010-07-29
申请号：US12695955
申请日：2010-01-28
申请人： Isao Kannari , Taro Ikeda , Takashi Uno , Yuji Yamanaka , Yuuya Yokobori
发明人： Isao Kannari , Taro Ikeda , Takashi Uno , Yuji Yamanaka , Yuuya Yokobori
摘要： A sheet feeding apparatus includes a sheet stacking unit, a suction conveyance unit configured to convey an uppermost sheet stacked on the sheet stacking unit, a suction unit configured to adsorb the sheets onto the suction conveyance unit, and an adsorption completion detection unit. In the sheet feeding apparatus, when the tab-attached sheets are stacked on the sheet stacking unit and fed such that their tab portions are on the downstream side in a sheet feeding direction, the suction unit starts to adsorb the sheet in response to a sheet feeding signal, and the suction conveyance unit starts to convey the sheet immediately after the adsorption completion detection unit detects the completion of the adsorption. When the sheets other than the tab-attached sheets are fed, the suction unit previously adsorbs the sheet onto the suction conveyance unit, and the suction conveyance unit starts to convey the sheet in response to the sheet feeding signal.
摘要翻译： 片材进给装置包括片材堆积单元，用于输送堆叠在片材堆积单元上的最上面的片材的抽吸输送单元，被配置为将片材吸附到吸入输送单元上的吸引单元和吸附完成检测单元。 在片材供给装置中，当片状片材堆叠在片材堆积单元上并进给使得其片状部分在片材进给方向的下游侧时，吸引单元响应于片材开始吸附片材 在吸附完成检测单元检测到吸附完成之后立即开始输送片材。 当进给了片状片材以外的片材时，吸引单元预先将片材吸附到吸引传送单元上，并且吸引传送单元响应于片材进给信号开始传送片材。
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公开(公告)号：US07760049B2
公开(公告)日：2010-07-20
申请号：US11806123
申请日：2007-05-30
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/00
CPC分类号： H03H9/175 , H03H3/02 , H03H9/589 , H03H2003/025
摘要： A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.
摘要翻译： 薄膜体声波谐振器包括基板; 形成在基板上的声反射器部分; 以及包括依次堆叠在声反射器部分上的下电极，压电膜和上电极的声谐振器部分。与声共振器部分接触的声反射器部分的最上层具有根平均 平方粗糙度约为1nm以下。
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公开(公告)号：US07332754B2
公开(公告)日：2008-02-19
申请号：US11022814
申请日：2004-12-28
IPC分类号： H01L29/80
CPC分类号： H01L27/1203 , H01L29/8126
摘要： In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.
摘要翻译： 在本发明的半导体开关中，栅电极，源电极和漏极形成为使得MESFET的栅极和漏极之间的距离（假设分流FET）比栅极和漏极之间的距离长 假定通过FET，MESFET的假定为通过FET的MESFET的栅极击穿电压在不改变MESFET的栅极击穿电压的情况下增加，并且假定为通过FET，所以增加了MESFET的栅极击穿电压。
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公开(公告)号：US20070096851A1
公开(公告)日：2007-05-03
申请号：US11590804
申请日：2006-11-01
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/56
CPC分类号： H03H9/175 , H03H9/02125 , H03H9/589 , H03H9/605
摘要： A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.
摘要翻译： 体声波谐振器具有形成在基板上的声反射器部分，并且包括一个或多个低声阻抗层和一个或多个具有比低声阻抗层更高的声阻抗层的高声阻抗层，它们以堆叠关系设置， 谐振器部分形成在声反射器部分上并具有压电膜。 低声阻抗层中的至少一个由硅制成。
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公开(公告)号：US20050151208A1
公开(公告)日：2005-07-14
申请号：US11022814
申请日：2004-12-28
IPC分类号： H01L27/095 , H01L27/12 , H01L29/812 , H01L21/336 , H01L29/94
CPC分类号： H01L27/1203 , H01L29/8126
摘要： In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.
摘要翻译： 在本发明的半导体开关中，栅电极，源电极和漏极形成为使得MESFET的栅极和漏极之间的距离（假设分流FET）比栅极和漏极之间的距离长 假定通过FET，MESFET的假定为通过FET的MESFET的栅极击穿电压在不改变MESFET的栅极击穿电压的情况下增加，并且假定为通过FET，所以增加了MESFET的栅极击穿电压。
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公开(公告)号：US4928728A
公开(公告)日：1990-05-29
申请号：US308212
申请日：1989-02-09
申请人： Shinichi Nakane , Takashi Uno , Hiroshi Horii , Shinzo Kato , Namba Mitsuo , Uematsu Reppei
发明人： Shinichi Nakane , Takashi Uno , Hiroshi Horii , Shinzo Kato , Namba Mitsuo , Uematsu Reppei
IPC分类号： G01F15/00
CPC分类号： G01F15/003 , G01F15/002 , F23N2023/08 , F23N2023/22 , F23N2025/06 , Y10T137/7727 , Y10T137/7759 , Y10T137/7761 , Y10T137/86389
摘要： A flow rate of gas is measured with a flow rate measurement means and a "consumption state" defined with a combination of maximum flow rate, the total amount and a consumption time of the gas is therefor detected. The consumption state is compared with a reference consumption condition which is represented by a predetermined consumption state, and when the consumption state exceeds the reference consumption condition, supply of the gas is interrupted. Furthermore, a monitor range of the consumption state is formed, and when a consumption state is present in the monitor range, the reference consumption condition is changed.
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