公开(公告)号：US06207519B1

公开(公告)日：2001-03-27

申请号：US09158875

申请日：1998-09-23

申请人： Hyun-Sik Kim ,  Heon-Jong Shin

发明人： Hyun-Sik Kim ,  Heon-Jong Shin

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833 ,  Y10S257/90

摘要： A semiconductor device having a double spacer and a method of manufacturing the device are provided. The semiconductor device includes a first spacer formed on the sidewall of a gate electrode and a second spacer formed on the slanted sidewall of the first spacer. A first impurity region is formed doped with a first conductivity type impurity at a first concentration and formed at a small junction depth in the substrate to self-align at the edge of the gate electrode. A second impurity region doped with second conductivity type impurity at a second concentration is formed at a large junction depth in the substrate to self-align at the edge of the first spacer. A third impurity region doped with the first conductivity type impurity at a third concentration is formed at a medium junction depth in the second impurity region to self-align at the edge of the second spacer.

摘要翻译： 提供了具有双间隔物的半导体器件及其制造方法。 半导体器件包括形成在栅电极的侧壁上的第一间隔物和形成在第一间隔物的倾斜侧壁上的第二间隔物。 第一杂质区被形成为掺杂有第一浓度的第一导电型杂质并且形成在衬底中的小结深处以在栅电极的边缘处自对准。 在第二浓度下掺杂有第二导电类型杂质的第二杂质区域形成在衬底中的大的结深处以在第一间隔物的边缘处自对准。 在第二杂质区域的中间结深处形成掺杂有第三浓度的第一导电型杂质的第三杂质区域，以在第二间隔物的边缘处自对准。