公开(公告)号：US20090152528A1

公开(公告)日：2009-06-18

申请号：US12118543

申请日：2008-05-09

Applicant: Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

Inventor： Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

IPC: H01L29/06 ,  H01L21/02

CPC classification number: H01L33/0045 ,  H01L33/02

Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。