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1.发明授权Hybrid laser diode for single mode operation and method of fabricating the same 失效用于单模操作的混合激光二极管及其制造方法公开(公告)号：US07974326B2
公开(公告)日：2011-07-05
申请号：US12118551
申请日：2008-05-09
Applicant: Young-Ahn Leem , Ki-Soo Kim , Jung-Ho Song , O-Kyun Kwon , Gyung-Ock Kim
Inventor： Young-Ahn Leem , Ki-Soo Kim , Jung-Ho Song , O-Kyun Kwon , Gyung-Ock Kim
IPC: H01S5/00
CPC classification number: H01S5/026 , H01S5/0215 , H01S5/1014 , H01S5/1032 , H01S5/12 , H01S5/32333
Abstract: Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Abstract translation: 提供了用于单模操作的混合激光二极管和用于制造混合激光二极管的方法。 混合激光二极管包括硅层，设置在硅层上的有源图案以及设置在硅层和活性图案之间的结合层。 这里，结合层包括构成布拉格光栅的衍射图案。
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2.发明授权High-power, broad-band, superluminescent diode and method of fabricating the same 有权大功率，宽带，超发光二极管及其制造方法公开(公告)号：US07745836B2
公开(公告)日：2010-06-29
申请号：US12118543
申请日：2008-05-09
Applicant: Jung-Ho Song , Ki-Soo Kim , Young-Ahn Leem , Gyung-Ock Kim
Inventor： Jung-Ho Song , Ki-Soo Kim , Young-Ahn Leem , Gyung-Ock Kim
IPC: H01L29/16
CPC classification number: H01L33/0045 , H01L33/02
Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。
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公开(公告)号：US07693361B2
公开(公告)日：2010-04-06
申请号：US12117710
申请日：2008-05-08
Applicant: Young-Ahn Leem , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
Inventor： Young-Ahn Leem , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
IPC: G02B6/00
CPC classification number: G02B6/12004 , G02B2006/12121 , G02B2006/12152 , H01S5/021 , H01S5/0215 , H01S5/0218 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/32316 , H01S5/32333
Abstract: Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.
Abstract translation: 提供了一种混合式激光二极管。 混合激光二极管包括：构成平板波导的硅层; 以及配置在硅层上以构成沟道波导的化合物半导体层。
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公开(公告)号：US20090116523A1
公开(公告)日：2009-05-07
申请号：US12117710
申请日：2008-05-08
Applicant: Young-Ahn LEEM , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
Inventor： Young-Ahn LEEM , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
IPC: H01S5/00
CPC classification number: G02B6/12004 , G02B2006/12121 , G02B2006/12152 , H01S5/021 , H01S5/0215 , H01S5/0218 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/32316 , H01S5/32333
Abstract: Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.
Abstract translation: 提供了一种混合激光二极管。 混合激光二极管包括：构成平板波导的硅层; 以及配置在硅层上以构成沟道波导的化合物半导体层。
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5.发明申请HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME 有权高功率，宽带，超亮度二极管及其制造方法公开(公告)号：US20090152528A1
公开(公告)日：2009-06-18
申请号：US12118543
申请日：2008-05-09
Applicant: Jung-Ho SONG , Ki-Soo Kim , Young-Ahn Leem , Gyung-Ock Kim
Inventor： Jung-Ho SONG , Ki-Soo Kim , Young-Ahn Leem , Gyung-Ock Kim
CPC classification number: H01L33/0045 , H01L33/02
Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。
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Patent Agency Ranking
公开(公告)号：US20090252457A1
公开(公告)日：2009-10-08
申请号：US12199517
申请日：2008-08-27
Applicant: Duk-Jun KIM , Jung-Ho Song , Jong-Moo Lee , Junghyung Pyo , Gyung-Ock Kim
Inventor： Duk-Jun KIM , Jung-Ho Song , Jong-Moo Lee , Junghyung Pyo , Gyung-Ock Kim
IPC: G02B6/26
CPC classification number: G02B6/12011 , G02B2006/12119
Abstract: Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.
Abstract translation: 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器，输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。
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公开(公告)号：US07848602B2
公开(公告)日：2010-12-07
申请号：US12199517
申请日：2008-08-27
Applicant: Duk-Jun Kim , Jung-Ho Song , Jong-Moo Lee , Junghyung Pyo , Gyung-Ock Kim
Inventor： Duk-Jun Kim , Jung-Ho Song , Jong-Moo Lee , Junghyung Pyo , Gyung-Ock Kim
CPC classification number: G02B6/12011 , G02B2006/12119
Abstract: Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.
Abstract translation: 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器，输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。
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公开(公告)号：US20100150499A1
公开(公告)日：2010-06-17
申请号：US12477907
申请日：2009-06-04
Applicant: Duk-Jun Kim , Jung-Hyung Pyo , Jung-Ho Song , In-Gyoo Kim , Gyung-Ock Kim
Inventor： Duk-Jun Kim , Jung-Hyung Pyo , Jung-Ho Song , In-Gyoo Kim , Gyung-Ock Kim
CPC classification number: G02B6/12011
Abstract: Provided is a photonics device including at least two arrayed waveguide grating structures. Each of the arrayed waveguide grating structures of the photonics device includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler to the output star coupler. Each of the arrayed waveguides includes at least one first section having a high confinement factor and at least two second sections having a low confinement factor. The first sections of the arrayed waveguides have the same structure.
Abstract translation: 提供了包括至少两个阵列波导光栅结构的光子器件。 光子器件的每个阵列波导光栅结构包括输入星形耦合器，输出星形耦合器和将输入星形耦合器光耦合到输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个第一部分和具有低约束因子的至少两个第二部分。 阵列波导的第一部分具有相同的结构。
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公开(公告)号：US20100301448A1
公开(公告)日：2010-12-02
申请号：US12847974
申请日：2010-07-30
Applicant: O-Kyun KWON , Dong-Woo Suh , Junghyung Pyo , Gyung-Ock Kim
Inventor： O-Kyun KWON , Dong-Woo Suh , Junghyung Pyo , Gyung-Ock Kim
IPC: H01L27/12
CPC classification number: H01L21/76267 , H01L21/76283
Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。
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公开(公告)号：US20100144075A1
公开(公告)日：2010-06-10
申请号：US12491443
申请日：2009-06-25
Applicant: In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
Inventor： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
IPC: H01L33/00
Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.
Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。
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