Gas sensor and method of making
    31.
    发明授权
    Gas sensor and method of making 有权
    气体传感器及制作方法

    公开(公告)号:US07827852B2

    公开(公告)日:2010-11-09

    申请号:US11961092

    申请日:2007-12-20

    IPC分类号: G01N7/10

    摘要: A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.

    摘要翻译: 公开了一种气体传感器。 气体传感器包括气体感测层,其包括掺杂的氧缺乏氧化钨和选自Re,Ni,Cr,V,W及其组合的掺杂剂,位于钛层内的至少一个电极,以及 响应修改层。 所述至少一个电极与所述气体感测层连通,并且所述气体感测层能够检测至少一种选自NO,NO 2,SO x O 2,H 2 O和NH 3的气体。 还公开了一种制造气体传感器的方法。