公开(公告)号：US20210193610A1

公开(公告)日：2021-06-24

申请号：US16721477

申请日：2019-12-19

Applicant: Micron Technology, Inc.

Inventor： Jungbae Lee

IPC: H01L23/00

Abstract: A semiconductor device having a capillary flow structure for a direct chip attachment is provided herein. The semiconductor device generally includes a substrate and a semiconductor die having a conductive pillar electrically coupled to the substrate. The front side of the semiconductor die may be spaced a distance apart from the substrate forming a gap. The semiconductor device further includes first and second elongate capillary flow structures projecting from the front side of the semiconductor die at least partially extending toward the substrate. The first and second elongate capillary flow structures may be spaced apart from each other at a first width configured to induce capillary flow of an underfill material along a length of the first and second elongate capillary flow structures. The first and second capillary flow structures may include pairs of elongate capillary flow structures forming passageways therebetween to induce capillary flow at an increased flow rate.