公开(公告)号：US20210012824A1

公开(公告)日：2021-01-14

申请号：US16507826

申请日：2019-07-10

Applicant: Micron Technology, Inc.

Inventor： Michael Mutch ,  Ashonita A. Chavan ,  Sameer Chhajed ,  Beth R. Cook ,  Kamal Kumar Muthukrishnan ,  Durai Vishak Nirmal Ramaswamy ,  Lance Williamson

IPC: G11C11/22 ,  H01L27/11502 ,  H01L49/02

Abstract: A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-spaced walls, a second capacitor electrode comprising a portion above the first capacitor electrode, and capacitor insulator material between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material. A parallel current leakage path is between the second capacitor electrode and the first capacitor electrode. The parallel current leakage path is circuit-parallel with the intrinsic current leakage path, of lower total resistance than the intrinsic current leakage path, and comprises leaker material that is everywhere laterally-outward of laterally-innermost surfaces of the laterally-spaced walls of the first capacitor electrode. Other embodiments, including methods, are disclosed.

公开(公告)号：US20210005451A1

公开(公告)日：2021-01-07

申请号：US17027331

申请日：2020-09-21

Applicant: Micron Technology, Inc.

Inventor： Ashonita A. Chavan ,  Durai Vishak Nirmal Ramaswamy ,  Michael Mutch ,  Sameer Chhajed

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/786 ,  H01L21/762

Abstract: A method includes forming a first amorphous material, forming a second amorphous material over and in contact with the first material, removing a portion of the second material and the first material to form pillars, and exposing the materials to a temperature between a crystallization temperature of the first material and a crystallization temperature of the second material. The first material and the second material each comprise at least one element selected from the group consisting of silicon and germanium. The second material exhibits a crystallization temperature different than a crystallization temperature of the first material. Semiconductor structures, memory devices, and systems are also disclosed.