公开(公告)号：US20080282029A1

公开(公告)日：2008-11-13

申请号：US12109774

申请日：2008-04-25

申请人： Ganesh Balakrishnan ,  Anil Krishna

发明人： Ganesh Balakrishnan ,  Anil Krishna

IPC分类号： G06F12/00

CPC分类号： G11C11/4076 ,  G11C2207/2254

摘要： A design structure embodied in a machine readable storage medium for designing, manufacturing, and/or testing a design for dynamic optimization of DRAM controller page policy is provided. The design structure can include a memory module, which can include multiple different memories, each including a memory controller coupled to a memory array of memory pages. Each of the memory pages in turn can include a corresponding locality tendency state. A memory bank can be coupled to a sense amplifier and configured to latch selected ones of the memory pages responsive to the memory controller. Finally, the module can include open page policy management logic coupled to the memory controller. The logic can include program code enabled to granularly change open page policy management of the memory bank responsive to identifying a locality tendency state for a page loaded in the memory bank.

摘要翻译： 提供了一种体现在用于设计，制造和/或测试用于DRAM控制器页面策略的动态优化的设计的机器可读存储介质中的设计结构。 设计结构可以包括存储器模块，其可以包括多个不同的存储器，每个存储器包括耦合到存储器页的存储器阵列的存储器控​​制器。 每个存储器页面又可以包括相应的局部趋势状态。 存储器组可以耦合到读出放大器并被配置为响应于存储器控制器来锁存存储器页中的选定存储器页。 最后，模块可以包括耦合到存储器控制器的开放页面策略管理逻辑。 该逻辑可以包括能够响应于识别加载在存储体中的页面的位置倾向状态，使得能够精细地改变存储体的打开页面策略管理的程序代码。