公开(公告)号：US20070134859A1

公开(公告)日：2007-06-14

申请号：US11304351

申请日：2005-12-14

申请人： Giuseppe Curello ,  Hemant Deshpande ,  Sunit Tyagi ,  Mark Bohr

发明人： Giuseppe Curello ,  Hemant Deshpande ,  Sunit Tyagi ,  Mark Bohr

IPC分类号： H01L21/84

CPC分类号： H01L29/66628 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78639 ,  H01L29/78687

摘要： A MOS device comprises a gate stack comprising a gate electrode disposed on a gate dielectric, a first spacer and a second spacer formed on laterally opposite sides of the gate stack, a source region proximate to the first spacer, a drain region proximate to the second spacer, and a channel region subjacent to the gate stack and disposed between the source region and the drain region. The MOS device of the invention further includes a buried oxide (BOX) region subjacent to the channel region and disposed between the source region and the drain region. The BOX region enables deeper source and drain regions to be formed to reduce transistor resistance and silicide spike defects while preventing gate edge junction parasitic capacitance.

摘要翻译： MOS器件包括栅极堆叠，其包括设置在栅极电介质上的栅极电极，形成在栅极堆叠的横向相对侧上的第一间隔物和第二间隔物，靠近第一间隔物的源极区域，靠近第二间隔区的漏极区域 间隔物和位于栅叠层下方的沟道区，并设置在源区和漏区之间。 本发明的MOS器件还包括在沟道区域的下方并设置在源极区域和漏极区域之间的掩埋氧化物（BOX）区域。 BOX区域能够形成更深的源极和漏极区域，以减少晶体管电阻和硅化物尖峰缺陷，同时防止栅极边缘结的寄生电容。

公开(公告)号：US20070004114A1

公开(公告)日：2007-01-04

申请号：US11174230

申请日：2005-06-30

申请人： Seok-Hee Lee ,  Sanjay Natarajan ,  Ramune Nagisetty ,  Sunit Tyagi ,  Guiseppe Curello

发明人： Seok-Hee Lee ,  Sanjay Natarajan ,  Ramune Nagisetty ,  Sunit Tyagi ,  Guiseppe Curello

IPC分类号： H01L21/8234

CPC分类号： H01L29/7843 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A process for fabricating an n channel transistor, which results in electron mobility improvement in the channel, is described. Sacrificial capping layers comprising an oxide and nitride layer are conformally formed over a polysilicon gate after source and drain implantation, and remain in place during annealing.

摘要翻译： 描述了一种制造n沟道晶体管的方法，其导致沟道中的电子迁移率提高。 包含氧化物和氮化物层的牺牲覆盖层在源极和漏极注入之后在多晶硅栅极上保形地形成，并且在退火期间保持原位。

公开(公告)号：US20050106792A1

公开(公告)日：2005-05-19

申请号：US10714139

申请日：2003-11-14

申请人： Stephen Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

发明人： Stephen Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

IPC分类号： H01L21/336 ,  H01L29/10

CPC分类号： H01L29/66636 ,  H01L29/1054 ,  H01L29/7842

摘要： Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

摘要翻译： 用于在器件的沟道区域中形成应变硅层的各种方法以及根据所公开的方法构造的器件。 在一个实施例中，形成应变诱导层，在应变诱导层上形成松弛层，去除应变诱导层的一部分，这使得应变诱导层松弛并使应变放松层。