公开(公告)号：US20200111921A1

公开(公告)日：2020-04-09

申请号：US16154021

申请日：2018-10-08

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Bin YANG ,  Kai LIU

IPC: H01L29/94 ,  H01L27/13 ,  H01L49/02 ,  H01L23/532 ,  H01L29/786 ,  H01L23/00 ,  H01L23/522

Abstract: Certain aspects of the present disclosure provide a variable transistor-based capacitive element implemented on a glass or dielectric substrate. Such a variable transistor-based capacitive element may be suitable for use as a tunable capacitor in a passive-on-glass (POG) device, for example. One example device having a tunable capacitance generally includes a glass or dielectric substrate and a transistor disposed above the glass or dielectric substrate. The transistor has a gate region, a drain region, and a source region, wherein a capacitance of the transistor is configured to vary based on a voltage between the gate region and the drain region.