Micro-optic elements and method for making the same
    31.
    发明授权
    Micro-optic elements and method for making the same 失效
    微光元件及其制作方法

    公开(公告)号:US07531104B1

    公开(公告)日:2009-05-12

    申请号:US10104900

    申请日:2002-03-20

    申请人: Ruey-Jen Hwu

    发明人: Ruey-Jen Hwu

    IPC分类号: C23F1/00

    摘要: A method of making micro-optic elements. In one embodiment, photo-resist elements each having predetermined dimensions are transferred onto a substrate. The photo-resist elements are exposed to a reflow process to shape the top surface of the elements into a curved surface. The method also involves a reactive ion etching process having controlled parameters, such as a photo-resist depth and the selectivity between the substrate and photo-resist. A predetermined photo-resist depth and selectivity form a micro-optic element having a predetermined shape, preferably an elliptical or parabolic shape. In another aspect of the present invention, a micro-optic element is used to construct a micro-mirror for eliminating filamentation and promoting single mode operation of high-power broad area semiconductor lasers. The lenses and micro-mirrors produced by methods disclosed herein are configured to collimate the output of high-power lasers and promote a Gaussian intensity profile laser beam from a broad area laser beam.

    摘要翻译: 制造微光元件的方法。 在一个实施例中,每个具有预定尺寸的光致抗蚀剂元件被转印到基底上。 将光致抗蚀剂元件暴露于回流工艺以将元件的顶表面成形为曲面。 该方法还涉及具有受控参数的反应离子蚀刻工艺,例如光致抗蚀剂深度和衬底与光致抗蚀剂之间的选择性。 预定的光刻胶深度和选择性形成具有预定形状,优选椭圆形或抛物线形状的微光学元件。 在本发明的另一方面,微光元件用于构造用于消除细丝的微镜并促进大功率广域半导体激光器的单模操作。 通过本文公开的方法制造的透镜和微镜被配置为准直大功率激光器的输出并且促进来自广域激光束的高斯强度分布激光束。

    Solid state vacuum devices and method for making the same

    公开(公告)号:US06995502B2

    公开(公告)日:2006-02-07

    申请号:US10067616

    申请日:2002-02-04

    IPC分类号: H01J1/46

    摘要: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

    Solid state vacuum devices and method for making the same

    公开(公告)号:US20060125368A1

    公开(公告)日:2006-06-15

    申请号:US11348959

    申请日:2006-02-07

    IPC分类号: H01J1/46

    摘要: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.