公开(公告)号：US07397175B2

公开(公告)日：2008-07-08

申请号：US11348959

申请日：2006-02-07

Applicant: Ruey-Jen Hwu ,  Larry Sadwick

Inventor： Ruey-Jen Hwu ,  Larry Sadwick

IPC: H01J1/46 ,  H01J21/10

CPC classification number: H01J1/46 ,  H01J1/13 ,  H01J3/027 ,  H01J19/38 ,  H01J21/105

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises a cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract translation: 固态真空装置（SSVD）及其制造方法。 在一个实施例中，SSVD形成三极管器件，其包括其中形成有腔的衬底。 SSVD还包括位于空腔开口附近的阴极，其中阴极以桥形式跨越空腔，在阴极和衬底之间产生气隙。 另外，SSVD还包括位于阳极和阴极之间的阳极和栅极。 在向阴极施加热量时，电子从阴极释放，通过栅格并被阳极接收。 响应于接收电子，阳极产生电流。 由阳极接收的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管，四极管，五极管和其它高阶器件配置。

公开(公告)号：US20060125368A1

公开(公告)日：2006-06-15

申请号：US11348959

申请日：2006-02-07

Applicant: Ruey-Jen Hwu ,  Larry Sadwick

Inventor： Ruey-Jen Hwu ,  Larry Sadwick

IPC: H01J1/46

CPC classification number: H01J1/46 ,  H01J1/13 ,  H01J3/027 ,  H01J19/38 ,  H01J21/105

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

公开(公告)号：US07067980B2

公开(公告)日：2006-06-27

申请号：US10775266

申请日：2004-02-10

Applicant: Larry Sadwick ,  Ruey-Jen Hwu

Inventor： Larry Sadwick ,  Ruey-Jen Hwu

IPC: H01J25/34

CPC classification number: H01J23/08 ,  H01J25/10

Abstract: An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

Abstract translation: 公开了一种改进的速调管装置，其具有相对于沿着纵向轴线均匀间隔开的静电（ES）磁场产生部件，以形成电子束室。 当对磁场产生部件施加交流电（AC）时，ES磁场产生部件产生限制通过室的电子束的磁通量。 另外的改进包括由单片电子导电金属形成的室，其具有梯形结构，其围绕纵向铰链对称，其允许结构围绕铰链折叠以形成合适的电子束室。

公开(公告)号：US07005783B2

公开(公告)日：2006-02-28

申请号：US10067625

申请日：2002-02-04

Applicant: RueyJen Hwu ,  Larry Sadwick

Inventor： RueyJen Hwu ,  Larry Sadwick

IPC: H01J1/46 ,  H01J21/10

CPC classification number: H01J19/08 ,  H01J21/105

Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

公开(公告)号：US06995502B2

公开(公告)日：2006-02-07

申请号：US10067616

申请日：2002-02-04

Applicant: Ruey-Jen Hwu ,  Larry Sadwick

Inventor： Ruey-Jen Hwu ,  Larry Sadwick

IPC: H01J1/46

CPC classification number: H01J1/46 ,  H01J1/13 ,  H01J3/027 ,  H01J19/38 ,  H01J21/105

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.