公开(公告)号：US07554158B2

公开(公告)日：2009-06-30

申请号：US11338641

申请日：2006-01-25

申请人： Ryota Yamamoto ,  Kuniko Kikuta

发明人： Ryota Yamamoto ,  Kuniko Kikuta

IPC分类号： H01L29/76

CPC分类号： H01L21/823878 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0928

摘要： An N-type deep well is used to protect a circuit from a noise. However, a noise with a high frequency propagates through the N-type deep well, and as a result, the circuit that should be protected malfunctions. To reduce the area of the N-type deep well. For instance, in the present invention, a semiconductor device comprises a semiconductor substrate of a first conductivity type, a digital circuit part and an analog circuit part provided on the semiconductor substrate, a plurality of wells of the first conductivity type formed in either the analog circuit part or the digital circuit part, and a first deep well of a second conductivity type, which is the opposite conductivity type to the first conductivity type, isolating some of the plurality of wells from the semiconductor substrate.

摘要翻译： N型深井用于保护电路免受噪音。 然而，高频噪声通过N型深井传播，因此应保护的电路发生故障。 减少N型深井的面积。 例如，在本发明中，半导体器件包括第一导电类型的半导体衬底，设置在半导体衬底上的数字电路部分和模拟电路部分，第一导电类型的多个阱形成于模拟 电路部分或数字电路部分，以及与第一导电类型相反的导电类型的第二导电类型的第一深阱，从半导体衬底隔离多个阱中的一些。