公开(公告)号：US20170040254A1

公开(公告)日：2017-02-09

申请号：US15331224

申请日：2016-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min HWANG ,  Young-Ho LEE ,  Seong-Soon CHO ,  Woon-Kyung LEE

IPC: H01L23/528 ,  H01L27/115

Abstract: Step shape pad structure and wiring structure in vertical type semiconductor device are include a first conductive line having a first line shape and including first pad regions at an upper surface of an edge portion, and a second conductive line having s second line shape and being spaced apart from the first conductive line and provided on the first conductive line. An end portion of the first conductive line is extended to a first position. Second pad regions are included on an upper surface of an edge portion of the second conductive line. An end portion of the second conductive line is extended to the first position. The second conductive line includes a dent portion at a facing portion to the first pad regions in a vertical direction to expose the first pad regions. The pad structure may be used in a vertical type nonvolatile memory device.

Abstract translation: 垂直型半导体器件中的阶形形状焊盘结构和布线结构包括具有第一线形状并且在边缘部分的上表面处包括第一焊盘区域的第一导电线和具有第二线形并且间隔开的第二导线 并且设置在第一导线上。 第一导线的端部延伸到第一位置。 第二焊盘区域包括在第二导线的边缘部分的上表面上。 第二导线的端部延伸到第一位置。 第二导线包括在垂直方向上与第一焊盘区域相对的部分处的凹部，以露出第一焊盘区域。 衬垫结构可以用在垂直型非易失性存储器件中。