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31.
公开(公告)号:US20220320184A1
公开(公告)日:2022-10-06
申请号:US17685821
申请日:2022-03-03
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Kenichi OKAZAKI , Daiki NAKAMURA , Rai SATO
IPC: H01L27/32
Abstract: A high-definition or high-resolution display apparatus is provided. In the display apparatus, a first light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode. A second light-emitting device includes a second pixel electrode, a second light-emitting layer, and the common electrode. End portions of the first and second pixel electrodes are covered with a first insulating layer. A second insulating layer covers side surfaces of the first and second light-emitting layers. A first color conversion layer overlaps the first light-emitting device. A second color conversion layer overlaps the second light-emitting device. The first and second light-emitting devices each have a function of emitting blue light. The first and second color conversion layers each have a function of converting light.
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公开(公告)号:US20220255045A1
公开(公告)日:2022-08-11
申请号:US17624593
申请日:2020-06-29
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Shunpei YAMAZAKI , Daiki NAKAMURA , Ryo HATSUMI , Rai SATO , Shingo EGUCHI , Koji KUSUNOKI
Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side. The second microlens includes a third surface and a fourth surface; the third surface is closer to the photoelectric conversion device than the fourth surface is; and the fourth surface has a smaller radius of curvature than the third surface.
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公开(公告)号:US20210399140A1
公开(公告)日:2021-12-23
申请号:US17279153
申请日:2019-09-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Rai SATO , Masami JINTYOU , Masayoshi DOBASHI , Takashi SHIRAISHI , Satoru SAITO , Yasutaka NAKAZAWA
IPC: H01L29/786 , H01L29/423 , H01L29/66
Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.
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