公开(公告)号：US20240114755A1

公开(公告)日：2024-04-04

申请号：US18236965

申请日：2023-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nozomu SUGISAWA ,  Yasumasa YAMANE ,  Daiki NAKAMURA ,  Tsunenori SUZUKI ,  Naoto GOTO ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K59/12

CPC classification number: H10K59/8793 ,  H10K59/1201

Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode. The first layer and the second layer use a material having a first spin density and a material having a second spin density higher than the first spin density, respectively, each observed with an electron spin resonance (ESR) spectrometer when the material is in a film state.

公开(公告)号：US20240079502A1

公开(公告)日：2024-03-07

申请号：US18505562

申请日：2023-11-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Yasutaka NAKAZAWA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G06F3/041 ,  G06F3/044 ,  H01L21/02 ,  H01L27/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78696 ,  G06F3/0412 ,  G06F3/044 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/0296 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  G02F1/1368

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.

公开(公告)号：US20240040846A1

公开(公告)日：2024-02-01

申请号：US18264476

申请日：2022-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Rai SATO ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/35

Abstract: A display device with high resolution is provided. A display device with a high aperture ratio is provided. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode. The first insulating layer covers end portions of the first pixel electrode and the second pixel electrode. The second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers an end portion of the first insulating layer. The first EL layer is provided over the first pixel electrode and the second EL layer is provided over the second pixel electrode. An end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer. The common electrode includes a portion overlapping with the first EL layer and a portion overlapping with the second EL layer. The first insulating layer includes an organic resin, and the second insulating layer includes an inorganic insulating material.

公开(公告)号：US20230317857A1

公开(公告)日：2023-10-05

申请号：US18207176

申请日：2023-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  H01L21/465 ,  H10K59/123 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1033 ,  H01L29/786 ,  H01L21/02551 ,  H01L21/02554 ,  H01L29/78693 ,  H01L21/02422 ,  H01L21/02631 ,  H01L21/465 ,  H01L29/78603 ,  H10K59/123 ,  H01L29/78696 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/24 ,  H01L29/42356 ,  H01L21/02565 ,  H01L21/30604 ,  H01L27/1259 ,  H01L29/66742 ,  H01L29/66969

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20230197824A1

公开(公告)日：2023-06-22

申请号：US17747063

申请日：2022-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Kenichi OKAZAKI ,  Takayuki OHIDE ,  Rai SATO

IPC: H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/1368

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

公开(公告)号：US20220293795A1

公开(公告)日：2022-09-15

申请号：US17830376

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20180337039A1

公开(公告)日：2018-11-22

申请号：US16033721

申请日：2018-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H01L21/02 ,  H01L29/786 ,  H01L21/28 ,  H01L27/32 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/02266 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02601 ,  H01L21/02631 ,  H01L21/28211 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4232 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a novel method for manufacturing a semiconductor device. To provide a method for manufacturing a highly reliable semiconductor device at relatively low temperature. The method includes a first step of forming a first oxide semiconductor film in a deposition chamber and a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber. Water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air. The first oxide semiconductor film and the second oxide semiconductor film are formed such that the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity. The second oxide semiconductor film is formed such that the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.

公开(公告)号：US20180025913A1

公开(公告)日：2018-01-25

申请号：US15654110

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L21/28 ,  H01L23/485 ,  C23F1/38 ,  H01L27/108 ,  H01L21/285

CPC classification number: H01L21/28052 ,  C23F1/38 ,  H01L21/28229 ,  H01L21/28506 ,  H01L23/485 ,  H01L27/10814 ,  H01L27/10882 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

公开(公告)号：US20170323908A1

公开(公告)日：2017-11-09

申请号：US15583325

申请日：2017-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor film, field-effect mobility and reliability are improved. A semiconductor device includes a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film is formed using In oxide or In—Zn oxide. The second oxide semiconductor film is formed using In-M-Zn oxide (M is Al, Ga, or Y) and includes a region where the number of In atoms is 40% or more and 50% or less and the number of M atoms is 5% or more and 30% or less of the total number of In, M, and Zn atoms.

公开(公告)号：US20170301699A1

公开(公告)日：2017-10-19

申请号：US15471368

申请日：2017-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.