公开(公告)号：US20220246087A1

公开(公告)日：2022-08-04

申请号：US17536560

申请日：2021-11-29

Applicant: Samsung Display Co., Ltd.

Inventor： KEUNWOO KIM ,  MEEJAE KANG ,  HANBIT KIM ,  DO KYEONG LEE ,  JAEHWAN CHU

IPC: G09G3/32 ,  H01L27/32

Abstract: A pixel includes a light emitting element, a driving switching element and a first compensation switching element and a second compensation switching element. The driving switching element is which applies a driving current to the light emitting element. The first compensation switching element and the second compensation switching element are connected between a control electrode of the driving switching element and an output electrode of the driving switching element. The first compensation switching element and the second compensation switching element are connected to each other in series. The driving switching element is a P-type transistor. The first compensation switching element is an N-type transistor. The second compensation switching element is a P-type transistor.

公开(公告)号：US20210367209A1

公开(公告)日：2021-11-25

申请号：US17228586

申请日：2021-04-12

Applicant: Samsung Display Co., Ltd.

Inventor： KEUNWOO KIM ,  HYENA KWAK ,  TAEWOOK KANG ,  JIYEONG SHIN ,  JAESEOB LEE

IPC: H01L51/52

Abstract: A display device includes: a base substrate including a first polymeric film; an active pattern on the base substrate and including a first channel region; and a first gate electrode overlapping the first channel region, wherein the first polymeric film has a first thickness in a first area overlapping the first channel region and a second thickness, which is smaller than the first thickness, in a second area different from the first area.

公开(公告)号：US20210335953A1

公开(公告)日：2021-10-28

申请号：US17079765

申请日：2020-10-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KEUNWOO KIM ,  HYENA KWAK ,  SANGSUB KIM ,  HANBIT KIM

IPC: H01L27/32 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3233

Abstract: A pixel includes: a driving transistor including a semiconductor layer and a gate electrode; and a compensation transistor connected to the gate electrode and the semiconductor layer of the driving transistor, wherein the first thin-film transistor includes: a first sub-transistor including a first gate electrode receiving a first scan signal having a first voltage level during a period; and a second sub-transistor connected to the first sub-transistor in parallel and comprising a second gate electrode receiving a second scan signal having a second voltage level that is an inverted level of the first voltage level during the same period.