公开(公告)号：US20170179414A1

公开(公告)日：2017-06-22

申请号：US15384968

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong CHOI ,  Eun Kyung LEE ,  Joo Young KIM ,  Jeong Il PARK ,  Youngjun YUN

IPC: H01L51/05 ,  H01L51/00

Abstract: A thin film transistor includes a gate electrode, an organic semiconductor overlapping the gate electrode, an insulator between the gate electrode and the organic semiconductor, and a source electrode and a drain electrode electrically connected to the organic semiconductor, respectively. The organic semiconductor is capable of being applied by a solution process, the insulator includes an inorganic insulating layer having a surface facing the organic semiconductor, and the surface includes a coating with a polysiloxane having an acrylic terminal group.

公开(公告)号：US20160277696A1

公开(公告)日：2016-09-22

申请号：US15031538

申请日：2014-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myounghoon JUNG ,  Jungwoo KIM ,  Youngjun YUN ,  Seungeon AHN

IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/3745 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/378

Abstract: Provided are an image sensor compensating for property degradation of a metal-oxide-semiconductor (MOS) resulting from a threshold voltage shift that may occur when photodiodes and a MOS circuit of configuring an amplifier are integrated on the same substrate, and a method for driving the image sensor.

Abstract translation: 提供一种图像传感器，其补偿由在构成放大器的光电二极管和MOS电路集成在同一基板上时可能发生的阈值电压偏移导致的金属氧化物半导体（MOS）的性能劣化，以及驱动方法 图像传感器。