公开(公告)号：US4073846A

公开(公告)日：1978-02-14

申请号：US654979

申请日：1976-02-03

申请人： Hitoshi Masumura ,  Shinobu Fujiwara ,  Hitoshi Tanaka

发明人： Hitoshi Masumura ,  Shinobu Fujiwara ,  Hitoshi Tanaka

IPC分类号： C04B35/465 ,  C04B35/475 ,  H01G4/12 ,  C04B35/46

CPC分类号： H01G4/1272 ,  C04B35/465 ,  C04B35/475

摘要： An improved reduction-reoxidation type semiconducting ceramic capacitor and the method for producing the same are disclosed. The main components of the substrate of the capacitor are CaTiO.sub.3, SrTiO.sub.3 and Bi.sub.2 O.sub.3 .multidot.xTiO.sub.2. Said substrate also contains at least one member selected from the group consisting of manganese, cobalt, nickel, chromium, vanadium, niobium, tantalum, lanthanum and cerium ions in total amounts of 0.025 to 0.4% by weight. The capacitor according to the present invention excels, in the temperature independency of the capacitance and tan .delta., etc.

摘要翻译： 公开了一种改进的还原再氧化型半导体陶瓷电容器及其制造方法。 电容器基板的主要部件是CaTiO3，SrTiO3和Bi2O3xxTiO2。 所述基材还含有总量为0.025〜0.4重量％的选自锰，钴，镍，铬，钒，铌，钽，镧和铈离子中的至少一种。 根据本发明的电容器在电容和tanδ等的独立性方面优异。