公开(公告)号：US06383867B1

公开(公告)日：2002-05-07

申请号：US09597601

申请日：2000-06-20

Applicant: Jae Young Kim ,  Tae Jin Kang

Inventor： Jae Young Kim ,  Tae Jin Kang

IPC: H01L218242

CPC classification number: H01L28/91 ,  H01L21/3212

Abstract: A method for forming an inner cylinder type storage electrode of a semiconductor memory device, comprising the steps of: forming a first insulating layer on a substrate; etching the first insulating layer to form a contact hole, thereby exposing a portion of the substrate; forming a conductive film for a storage electrode over the first insulating layer including the contact hole; forming a photosensitive film in a portion of the contact hole over the conductive film; forming a second insulating layer to be completely filled in the contact hole over the photosensitive film; etching the second insulating layer and the conductive film to expose the first insulating layer, thereby forming the storage electrode; and removing the first and second insulating layers and the photosensitive film.

Abstract translation: 一种用于形成半导体存储器件的内筒型存储电极的方法，包括以下步骤：在衬底上形成第一绝缘层; 蚀刻第一绝缘层以形成接触孔，从而暴露基板的一部分; 在包括所述接触孔的所述第一绝缘层上形成用于存储电极的导电膜; 在导电膜上的接触孔的一部分中形成感光膜; 形成完全填充在感光膜上的接触孔中的第二绝缘层; 蚀刻第二绝缘层和导电膜以暴露第一绝缘层，从而形成存储电极; 以及去除第一和第二绝缘层和感光膜。