公开(公告)号：US11227833B2

公开(公告)日：2022-01-18

申请号：US16571825

申请日：2019-09-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING, CO., LTD.

Inventor： Shao-Kuan Lee ,  Cheng-Chin Lee ,  Hsin-Yen Huang ,  Hai-Ching Chen ,  Shau-Lin Shue

IPC: H01L23/52 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522

Abstract: A method for forming an interconnect structure is provided. The method for forming the interconnect structure includes forming a first dielectric layer over a substrate, forming a first conductive feature through the first dielectric layer, forming a first blocking layer on the first conductive feature, forming a first etching stop layer over the first dielectric layer and exposing the first blocking layer, removing at least a portion of the first blocking layer, forming a first metal bulk layer over the first etching stop layer and the first conductive feature, and etching the first metal bulk layer to form a second conductive feature electrically connected to the first conductive feature.