公开(公告)号：US20170250279A1

公开(公告)日：2017-08-31

申请号：US15054080

申请日：2016-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Chang Wei ,  Chia-Lin Hsu ,  Hsien-Ming Lee ,  Ji-Cheng Chen

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L27/092

CPC classification number: H01L29/7848 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack, and a filter layer, and strain layers. The substrate has a semiconductor fin. The gate stack is disposed across the semiconductor fin. The gate stack includes a gate dielectric layer, a work function layer and a metal filling layer. The gate dielectric layer is disposed on the semiconductor fin. The work function layer is disposed on the gate dielectric layer. The metal filling layer is over the work function layer. The filter layer is disposed between the work function layer and the metal filling layer to prevent or decrease penetration of diffusion atoms. The strain layers are beside the gate stack. A material of the filter layer is different from a material of the work function layer and a material of the metal filling layer.