公开(公告)号：US10062782B2

公开(公告)日：2018-08-28

申请号：US15429861

申请日：2017-02-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chao-Ching Cheng ,  Chih Chieh Yeh ,  Cheng-Hsien Wu ,  Hung-Li Chiang ,  Jung-Piao Chiu ,  Tzu-Chiang Chen ,  Tsung-Lin Lee ,  Yu-Lin Yang ,  I-Sheng Chen

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7845 ,  H01L29/7853

Abstract: A semiconductor device includes a fin field effect transistor (FinFET). The FinFET includes a channel disposed on a fin, a gate disposed over the channel and a source and drain. The channel includes at least two pairs of a first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer. The first semiconductor layer has a different lattice constant than the second semiconductor layer. A thickness of the first semiconductor layer is three to ten times a thickness of the second semiconductor layer at least in one pair.