公开(公告)号：US20090309133A1

公开(公告)日：2009-12-17

申请号：US12483728

申请日：2009-06-12

申请人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

发明人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/823807 ,  H01L21/2686 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp(21541/T).

摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y <= 1E-5exp（21541 / T）的关系。

公开(公告)号：US20090304416A1

公开(公告)日：2009-12-10

申请号：US12477172

申请日：2009-06-03

申请人： Takayuki Ito ,  Shoichi Yoshikawa ,  Fuminori Moro ,  Noboru Oomoto

发明人： Takayuki Ito ,  Shoichi Yoshikawa ,  Fuminori Moro ,  Noboru Oomoto

IPC分类号： G03G15/01

CPC分类号： G03G15/0131 ,  G03G15/0121 ,  G03G15/0163 ,  G03G15/0173 ,  G03G2215/0103 ,  G03G2215/0138 ,  G03G2215/0148

摘要： An image forming apparatus includes a plurality of image carrier rollers placed on an inner circumferential side of an annular conveying path so as to face the annular conveying path and so as to be juxtaposed in a sheet conveying direction along the annular conveying path. Opposed rollers are provided on the outer circumferential side of the annular conveying path. The respective image carrier rollers and the opposed rollers which are in pressure contact therewith constitute pairs of transfer rollers, respectively. Imaging sections for forming intrinsic color images on surfaces of the respective image carrier rollers are provided. A sheet is introduced to the annular conveying path and is conveyed along the sheet conveying direction sequentially through nip sections of the pairs of transfer rollers, while the images formed on the surfaces of the respective image carrier rollers by the imaging sections are transferred one by one onto the sheet. The sheet with the images transferred thereon is released from the annular conveying path.

摘要翻译： 图像形成装置包括：多个图像承载辊，其设置在环形输送路径的内周侧，以便与环形输送路径相对并沿着环形输送路径沿片材输送方向并置。 相对的辊设置在环形输送路径的外周侧。 与其压接的各个图像承载辊和相对的辊分别构成成对的转印辊。 提供了用于在各个图像承载辊的表面上形成固有彩色图像的成像部分。 将片材引入到环形输送路径中并沿着片材输送方向顺序地通过成对的转印辊的夹持部分传送，同时通过成像部分形成在各个图像承载辊的表面上的图像被一个接一个地转印 到纸上 具有转印在其上的图像的纸从环形输送路径释放。

公开(公告)号：US20090143623A1

公开(公告)日：2009-06-04

申请号：US12276524

申请日：2008-11-24

申请人： Taiji Katsumata ,  Takayuki Ito ,  Masayuki Harada

发明人： Taiji Katsumata ,  Takayuki Ito ,  Masayuki Harada

IPC分类号： C07C43/04

CPC分类号： C07C255/13 ,  C07C255/30 ,  C07C2601/14 ,  C07C2602/28

摘要： Provided is a production process of a cyanoethyl ether by reacting an alcohol and acrylonitrile in a two-phase system of a non-ether solvent/an aqueous alkali solution.

摘要翻译： 本发明提供了在非醚溶剂/碱水溶液的两相体系中使醇与丙烯腈反应的氰乙醚的制造方法。

公开(公告)号：US20090138728A1

公开(公告)日：2009-05-28

申请号：US12081889

申请日：2008-04-23

申请人： Makoto Fujiwara ,  Yusuke Nemoto ,  Junichi Yasui ,  Takuji Maeda ,  Takayuki Ito ,  Yasushi Yamada ,  Shinji Inoue

发明人： Makoto Fujiwara ,  Yusuke Nemoto ,  Junichi Yasui ,  Takuji Maeda ,  Takayuki Ito ,  Yasushi Yamada ,  Shinji Inoue

IPC分类号： G06F12/14

CPC分类号： G06F21/123 ,  G06F21/572 ,  G06F21/72

摘要： A system including a secure LSI 1 establishes a communication path to/from a server 3 (UD1), and receives a common key-encrypted program generated by encryption with a common key and transmitted from the server 3 (UD6 and UD7). The received common key-encrypted program is decrypted to generate a raw program, and the raw program is re-encrypted with an inherent key to newly generate an inherent key-encrypted program, which is stored in an external memory.

公开(公告)号：US20080268660A1

公开(公告)日：2008-10-30

申请号：US12108589

申请日：2008-04-24

申请人： Takaharu Itani ,  Kenichi Yoshino ,  Takayuki Ito ,  Takashi Kawakami ,  Tetsuya Kugimiya

发明人： Takaharu Itani ,  Kenichi Yoshino ,  Takayuki Ito ,  Takashi Kawakami ,  Tetsuya Kugimiya

IPC分类号： H01L21/02 ,  H01L21/00

CPC分类号： H01L21/02087 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/66575

摘要： A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, has removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate; and conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.

摘要翻译： 制造涉及半导体衬底的热处理的半导体器件的方法，从所述半导体衬底的边缘部分的上表面，所述半导体衬底的边缘部分的斜面以及侧表面 的所述半导体衬底的边缘部分; 以及在去除所述表面层之后，从光源照射具有0.1毫秒至100毫微秒的脉冲宽度的光，从而对所述半导体衬底进行热处理。

公开(公告)号：US07253972B2

公开(公告)日：2007-08-07

申请号：US11208525

申请日：2005-08-23

申请人： Junichi Fujisaki ,  Takayuki Ito

发明人： Junichi Fujisaki ,  Takayuki Ito

IPC分类号： G02B13/02

CPC分类号： G02B13/02

摘要： A telephoto lens system of a four-lens-group arrangement includes a negative first lens group, a positive or negative second lens group, a negative third lens group and a positive fourth lens group. The telephoto lens system of the four-lens-group arrangement is constituted by less than six lens elements in total. The positive or negative second lens group is constituted by a positive lens element and a negative lens element which are cemented to each other, in this order from the object. The positive lens element has a convex surface with a larger curvature facing toward the object. The positive or negative second lens group satisfies the following condition: 0.8

摘要翻译： 四透镜组布置的长焦透镜系统包括负第一透镜组，正或负第二透镜组，负第三透镜组和正第四透镜组。 四透镜组布置的长焦透镜系统总共由少于六个透镜元件构成。 正或负第二透镜组由从物体的顺序彼此粘合的正透镜元件和负透镜元件构成。 正透镜元件具有面向物体的较大曲率的凸面。 正或负第二透镜组满足以下条件：<？in-line-formula description =“In-line formula”end =“lead”？> 0.8

公开(公告)号：US07209300B2

公开(公告)日：2007-04-24

申请号：US11302163

申请日：2005-12-14

申请人： Sachiko Ryu ,  Takayuki Ito

发明人： Sachiko Ryu ,  Takayuki Ito

IPC分类号： G02B13/04 ,  G02B9/04

CPC分类号： G02B13/04

摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group.The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element.The front lens group satisfies the following conditions: 0.5

摘要翻译： 广角镜头系统包括正前透镜组，光圈和正后透镜组。 前透镜组包括负的第一子透镜组和正的第二子透镜组。 负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。 前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75 ）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <| f < ＆lt;＆lt;＆lt;＆lt;＆lt;＆gt;＆lt; 1b＆lt; 1＆lt; 1.0（2）＆lt;？in-line-formula description =“In-line Formulas”end =“tail” -formulae description =“In-line Formulas”end =“lead”？> 0.35 <0.6（3）<？in-line-formula description =“In-line Formulas” end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

公开(公告)号：US20060126192A1

公开(公告)日：2006-06-15

申请号：US11302163

申请日：2005-12-14

申请人： Sachiko Ryu ,  Takayuki Ito

发明人： Sachiko Ryu ,  Takayuki Ito

IPC分类号： G02B13/04

CPC分类号： G02B13/04

摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group. The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element. The front lens group satisfies the following conditions: 0.5

摘要翻译： 广角镜头系统包括正前透镜组，光圈和正后透镜组。 前透镜组包括负的第一子透镜组和正的第二子透镜组。 负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。 前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75。 。 。 （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 1＆lt; 1a＆gt; / f＆lt; 1b＆lt; 1.0。 。 。 （2）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.35 1bi<0.6。 。 。 （3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

公开(公告)号：US20060081801A1

公开(公告)日：2006-04-20

申请号：US10541131

申请日：2004-10-19

申请人： Masaji Takahashi ,  Takayuki Ito

发明人： Masaji Takahashi ,  Takayuki Ito

IPC分类号： F16K31/02

CPC分类号： F16K31/0658 ,  F02M25/0836 ,  F02M2025/0845 ,  Y10T137/8667 ,  Y10T137/86759

摘要： A guide boss is provided in a diaphragm blocking the halfway portion of a channel; a valve disk is formed in the shape of a cylinder; the inner face of this cylinder-shaped valve disk is slidably engaged around the guide boss; and further, a valve port consisting of a plurality of long bores are formed in a diaphragm surrounding the guide boss. Thereby, fluid can responsively flow into the valve port when the valve disk is opened, and the follow-up of the fluid is accelerated.

摘要翻译： 引导凸台设置在阻塞通道的中间部分的隔膜中; 阀盘形成为圆筒形状; 该圆柱形阀盘的内表面可滑动地接合在引导凸台周围; 此外，在围绕导向凸台的隔膜中形成有由多个长孔组成的阀口。 因此，当阀盘打开时，流体可以响应地流入阀口，并且加速了流体的跟踪。

公开(公告)号：US07026205B2

公开(公告)日：2006-04-11

申请号：US10815931

申请日：2004-04-02

申请人： Takayuki Ito ,  Kyoichi Suguro

发明人： Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/823842

摘要： A semiconductor device manufacturing method having forming first and second insulating gate portions spaced from each other on a semiconductor substrate, selectively implanting the first conductivity type impurity ions to the first gate electrode and a surface layer of the semiconductor substrate adjacent to the first insulating gate portion, selectively implanting the second conductivity type impurity ions to the second gate electrode and the surface layer adjacent to the second insulating gate portion, after implanting the first and second conductivity types impurity ions, pre-annealing at a first substrate temperature, and after the pre-annealing, main-activating for the first and second types impurity ions at a second substrate temperature higher than the first substrate temperature for a treatment period shorter than a period of the pre-annealing.

摘要翻译： 一种半导体器件制造方法，其具有形成在半导体衬底上彼此间隔开的第一和第二绝缘栅极部分，选择性地将第一导电类型杂质离子注入到第一栅电极和与第一绝缘栅极部分相邻的半导体衬底的表面层 在将第一和第二导电类型的杂质离子注入到第二栅极电极和与第二绝缘栅极部分相邻的表面层之后，在第一衬底温度下进行预退火之后，以及在第一衬底温度之后，选择性地将第二导电型杂质离子注入 在第一衬底温度高于第一衬底温度的第二衬底温度下处理短于预退火周期的处理期间，对第一和第二类杂质离子进行主要激活。