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公开(公告)号：US08148717B2
公开(公告)日：2012-04-03
申请号：US12929504
申请日：2011-01-28
申请人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
发明人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L21/823807 , H01L21/2686 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp (21541/T).
摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y＆nlE; 1E-5exp（21541 / T）的关系。
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公开(公告)号：US20120052600A1
公开(公告)日：2012-03-01
申请号：US13217736
申请日：2011-08-25
IPC分类号： H01L21/66 , H01L21/306 , B65D85/86 , B05C11/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/32194 , G05B2219/32198 , G05B2219/45031 , Y02P90/22
摘要： A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.
摘要翻译： 一种半导体器件的制造方法，包括：在第一处理装置中以第一处理顺序对多个晶片执行第一处理; 在所述第一处理中获得关于所述多个晶片中的每一个的处理量; 通过在第一处理之后的第二处理装置中的第二处理来获得关于多个晶片中的每一个的处理量; 通过所述第一处理，通过所述第一处理和相对于所述多个晶片中的每一个处理的量，通过所述第二处理来确定与所述第一处理顺序不同的第二处理顺序相对于所述多个晶片中的每一个的处理量; 以及在所述第二处理装置中以所述第二处理顺序对所述多个晶片执行所述第二处理。
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公开(公告)号：US20120031441A1
公开(公告)日：2012-02-09
申请号：US13277251
申请日：2011-10-20
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译： 一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。
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公开(公告)号：US20110127578A1
公开(公告)日：2011-06-02
申请号：US12929504
申请日：2011-01-28
申请人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
发明人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
IPC分类号： H01L29/12
CPC分类号： H01L21/823807 , H01L21/2686 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp (21541/T).
摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y＆nlE; 1E-5exp（21541 / T）的关系。
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5.发明申请公开(公告)号：US20110089525A1
公开(公告)日：2011-04-21
申请号：US12926905
申请日：2010-12-16
申请人： Yasuhiro Ito , Kunihiro Miyazaki , Kenji Takakura
发明人： Yasuhiro Ito , Kunihiro Miyazaki , Kenji Takakura
IPC分类号： H01L29/06
CPC分类号： H01L21/76224 , H01L21/823481 , H01L29/78
摘要： A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.
摘要翻译： 在半导体衬底上形成有在半导体衬底上形成图案的第一绝缘膜作为掩模的沟槽; 将第二绝缘膜嵌入沟槽并平坦化; 选择性地去除第一绝缘膜的上部，暴露第二绝缘膜的侧面的一部分; 第二绝缘膜的一部分被各向同性地去除; 选择性地去除剩余的第一绝缘膜的下部; 然后将剩余的第二绝缘膜的一部分进一步各向同性地去除，使得第二绝缘膜的上表面距离半导体衬底的表面处于预定高度，具有最小锥角为90°或更大的锥形为 形成在第二绝缘膜的侧面上，并且形成STI。
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公开(公告)号：US07875527B2
公开(公告)日：2011-01-25
申请号：US12359635
申请日：2009-01-26
申请人： Yasuhiro Ito , Kunihiro Miyazaki , Kenji Takakura
发明人： Yasuhiro Ito , Kunihiro Miyazaki , Kenji Takakura
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481 , H01L29/78
摘要： A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.
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公开(公告)号：US20080310121A1
公开(公告)日：2008-12-18
申请号：US11658565
申请日：2005-07-26
IPC分类号： H05K7/20
摘要： The present invention improves heat dissipation of an electrical junction box. An electrical junction box includes a housing which houses a control circuit board disposed perpendicular to a power distribution board. The control circuit board includes a control circuit constructed on one side of an insulating substrate, electrical components mounted on the control circuit, and a heat dissipating means mounted on the other side. The power distribution board includes a plurality of bus bars laminated via a plurality of insulating layers. Consequently, heat generated by the electrical components can be dissipated efficiently by the heat dissipating means, thereby improving heat dissipation of the electrical junction box.
摘要翻译： 本发明改善了电接线盒的散热。 电接线盒包括容纳垂直于配电板设置的控制电路板的壳体。 该控制电路板包括一个控制电路，该控制电路构造在绝缘基板的一侧，安装在该控制电路上的电气元件和一个安装在另一侧的散热装置。 配电板包括通过多个绝缘层层叠的多个汇流条。 因此，可以通过散热装置有效地消散由电气部件产生的热量，从而改善电接线盒的散热。
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公开(公告)号：US20080202559A1
公开(公告)日：2008-08-28
申请号：US12081460
申请日：2008-04-16
IPC分类号： B08B3/04
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。
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公开(公告)号：US07305275B2
公开(公告)日：2007-12-04
申请号：US10507699
申请日：2003-03-27
申请人： Kunihiro Miyazaki , Soichi Nadahara , Kinya Usuda , Masaji Akahori , Sota Nakagawa , Ken Nakajima
发明人： Kunihiro Miyazaki , Soichi Nadahara , Kinya Usuda , Masaji Akahori , Sota Nakagawa , Ken Nakajima
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , B24B37/04 , B24B57/02 , C11D11/0047 , C23C16/52 , G05B2219/32082 , H01L21/02052 , Y02P90/20 , Y10S210/90
摘要： In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.
摘要翻译： 在用于灵活制造的小规模工厂中，以低成本提供纯净水供应系统，而不降低生产效率。 纯水系统产生多个等级的纯水，其通过连接到用于清洁，CMP，光刻等的使用点的管道供应。 一旦控制器收到来自每个使用点的请求信号以开始使用一定等级的纯水，则控制器确定所需量是否超过纯水系统能提供的纯水等级的容量。 如果不是，控制器将使用许可信号发送到使用点，以允许其使用纯净水。 当某个使用点正在使用所要求的纯水量时，控制器可能不允许请求使用点使用纯净水，直到从使用纯水的使用点发出使用结束信号。
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公开(公告)号：US20070095363A1
公开(公告)日：2007-05-03
申请号：US11588393
申请日：2006-10-27
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译： 一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。
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